BSM100GB120DN2K Siemens Semiconductor Group, BSM100GB120DN2K Datasheet - Page 5

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BSM100GB120DN2K

Manufacturer Part Number
BSM100GB120DN2K
Description
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
parameter: t
parameter: t
C
C
I
I
C
C
= f (V
= f (V
200
160
140
120
100
200
160
140
120
100
80
60
40
20
80
60
40
20
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
200
160
140
120
100
80
60
40
20
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
BSM 100 GB 120 DN2K
2
j
= 125 °C
3
V
Mar-29-1996
V
CE
5

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