BSM100GB120DN2K Siemens Semiconductor Group, BSM100GB120DN2K Datasheet - Page 6

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BSM100GB120DN2K

Manufacturer Part Number
BSM100GB120DN2K
Description
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Manufacturer
Siemens Semiconductor Group
Datasheet

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I
Cpuls
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
parameter: V
Cpuls
V
GE
GE
/ I
C
= ( Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
100
)
GE
)
,
= 15 V
400
T
= 100 A
200
j
= 150°C
600
300
600 V
800 1000 1200
400
500
800 V
nC
Q
V
V
Gate
CE
1600
700
6
I
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
0
CE
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
BSM 100 GB 120 DN2K
600
15
800
SC
20
1000 1200
25
10 µs, L < 50 nH
30
Mar-29-1996
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40

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