BSM100GB120DN2K Siemens Semiconductor Group, BSM100GB120DN2K Datasheet - Page 7

• Manufacturer Part Number: BSM100GB120DN2K
• Description: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

Typ. switching time
I = f (I
Typ. switching losses
E = f (I
Semiconductor Group
par.: V
par.: V
E
t
mWs
10
10
10
C
ns
60
50
45
40
35
30
25
20
15
10
C
) , inductive load , T
CE
CE
5
0
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
50
50
GE
GE
100
100
= ± 15 V, R
= ± 15 V, R
j
= 125°C
j
= 125°C
150
150
G
G
= 6.8
= 6.8
A
A
tdoff
tdon
tr
tf
Eon
Eoff
I
I
C
C
250
250
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
ns
40
30
25
20
15
10
G
CE
CE
5
0
4
3
2
1
G
0
0
) , inductive load , T
) , inductive load , T
= 600 V, V
= 600V, V
10
10
BSM 100 GB 120 DN2K
20
20
GE
GE
= ± 15 V, I
= ± 15 V, I
30
30
j
j
= 125°C
= 125°C
40
40
C
C
= 100 A
= 100 A
Mar-29-1996
tdoff
tdon
tr
tf
Eon
Eoff
R
R
G
G
60
60