BSM75GAL120DN2 Siemens Semiconductor Group, BSM75GAL120DN2 Datasheet

BSM75GAL120DN2

Manufacturer Part Number

BSM75GAL120DN2

Description

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

Manufacturer

Siemens Semiconductor Group

Datasheet

1.BSM75GAL120DN2.pdf (5 pages)

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Company:

Bonase Electronics (HK) Co., Limited

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BSM75GAL120DN2

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EUPEC

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Company:

Meier Automation Equipment Co., Limited

Part Number:

BSM75GAL120DN2

Manufacturer:

INFINEON/英飞凌

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20 000

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HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

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IGBT Power Module

Semiconductor Group

• Single switch with chopper diode

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

BSM 75 GAL 120 DN2

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

Gate-emitter voltage

DC collector current

Pulsed collector current, t

Power dissipation per IGBT

Chip temperature

Storage temperature

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 25 °C

= 80 °C

= 25 °C

= 80 °C

= 25 °C

= 20 k

1200V 105A

= 1 ms

Package

HALF BRIDGE GAL 1 C67076-A2011-A70

Symbol

Cpuls

stg

CGR

tot

thJC

thJCD

THJCDC

BSM 75 GAL 120 DN2

Ordering Code

55 / 150 / 56

-55 ... + 150

Values

+ 150

± 20

1200

2500

105

210

150

625

0.36

0.2

0.5

Mar-29-1996

Unit

°C

K/W

Vac

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BSM75GAL120DN2 Summary of contents

Page 1

IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 75 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter ...

Page 2

Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage ° ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...

Page 4

Electrical Characteristics Parameter Chopper Diode Chopper diode forward voltage I = 100 100 Reverse recovery time, chopper I ...

Page 5

Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g BSM 75 GAL 120 DN2 ...

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