MIG300Q2CMB1X TOSHIBA Semiconductor CORPORATION, MIG300Q2CMB1X Datasheet

no-image

MIG300Q2CMB1X

Manufacturer Part Number
MIG300Q2CMB1X
Description
High Power Switching Applications Motor Control Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MIG300Q2CMB1X
Manufacturer:
TOSHIBA
Quantity:
28
Part Number:
MIG300Q2CMB1X
Manufacturer:
VICOR
Quantity:
134
Part Number:
MIG300Q2CMB1X
Quantity:
60
High Power Switching Applications
Motor Control Applications
·
·
·
·
·
·
Equivalent Circuit
MIG300Q2CMB1X (1200V/300A 2in1)
Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit
current, overcurrent, undervoltage and overtemperature) into a single package.
The electrodes are isolated from the case.
Low thermal resistance
V
UL recognized: File No.E87989
Weight: 380 g (typ.)
1.
5.
CE (sat)
GND V
1
FO GND IN V
E2
FO (L)
FO (H)
2
S
= 2.4 V (typ.)
3
OUT
4
D
2.
6.
C2/E1
GND (L)
GND (H)
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
GND V
5
FO GND IN V
6
3.
7.
S
7
IN (L)
IN (H)
OUT
8
D
C1
4.
8.
V
V
D
D
(L)
(H)
1
MIG300Q2CMB1X
2001-11-13

Related parts for MIG300Q2CMB1X

MIG300Q2CMB1X Summary of contents

Page 1

... TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG300Q2CMB1X (1200V/300A 2in1) High Power Switching Applications Motor Control Applications · Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. ...

Page 2

... Package Dimensions: TOSHIBA 2-123C1A 1. FO (L) 2. GND ( (H) 6. GND ( ( ( ( ( MIG300Q2CMB1X Unit: mm 2001-11-13 ...

Page 3

... Signal Terminal Layout 1. FO (L) 2. GND ( (H) 6. GND ( ( ( ( ( MIG300Q2CMB1X Unit: mm 2001-11-13 ...

Page 4

... 600 300 (on « 25°C, Inductive load off t c (off) 4 MIG300Q2CMB1X Symbol Rating Unit V 900 1200 V CES I 300 300 2840 150 ° ...

Page 5

... off (OC Case temperature OTr UV ¾ UVr = Symbol Test Condition IGBT R th (j-c) FRD R Compound is applied th (c-f) 5 MIG300Q2CMB1X Min Typ. Max Unit ¾ ¾ 1.4 1.6 1.8 V 2.2 2.5 2 ¾ ¾ 0.1 ¾ ¾ 480 A ¾ ...

Page 6

... Waveform 2 Waveform C V Waveform 0 GND GND 10% 10 (off) t off 6 MIG300Q2CMB1X Intelligent power module C1 OUT V S GND C2/E1 OUT GND 1 90% 10% 10 (on 2001-11- ...

Page 7

... V V Waveform IN 0 Symbol Test Condition V P-N power terminal -GND signal terminal PWM control Switching time test circuit t dead t t dead dead 7 MIG300Q2CMB1X Min Typ. Max Unit ¾ 600 800 V 13.5 15 16.5 V ¾ ¾ 20 kHz ¾ ¾ (Note 2) 2001-11-13 ...

Page 8

... Collector-emitter voltage 0.1 0.01 400 0 1000 100 MIG300Q2CMB1X I – Common emitter 125° Switching time – off t c (on (off 125°C ...

Page 9

... Tc = 25°C 0.0003 0.001 1600 100 10 1 0.1 400 0 9 MIG300Q2CMB1X I – 25° Carrier frequency f (kHz – (t) w Diode stage Transistor stage 0.01 0 Pulse width t (s) w Turn off loss – ...

Page 10

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MIG300Q2CMB1X 10 000707EAA 2001-11-13 ...

Related keywords