MG400Q2YS60A TOSHIBA Semiconductor CORPORATION, MG400Q2YS60A Datasheet
MG400Q2YS60A
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MG400Q2YS60A Summary of contents
Page 1
... The electrodes are isolated from case. · Low thermal resistance. · · 2.4 V (typ.) CE (sat) Equivalent Circuit Signal terminal (H) 6. Ｃ1 E1 (H) 8. Open O 1 MG400Q2YS60A 2002-09-06 ...
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... Package Dimensions: 2-123C1B 1. 5. Signal Terminal Layout 2.54 Weight: 375 (H) 8. Open 2 MG400Q2YS60A Open 2002-09-06 ...
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... (See page 400 Symbol Test Condition = ¾ 600 (Fo MG400Q2YS60A Rating Unit 1200 V ±20 V 400 A 800 400 A 800 3750 150 °C -40~125 °C -20~100 °C 2500 (AC 1 min) ...
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... Symbol Test Condition Inverter IGBT stage R th (j-c) Inverter FRD stage R With silicon compound th (c- 90 (off) 4 MG400Q2YS60A Min Typ. Max ¾ ¾ 0.033 ¾ ¾ 0.068 ¾ ¾ 0.013 90% 10 2002-09-06 Unit °C/W °C/W ...
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... For parallel use of this product, please use the same rank for both V parallel without fail (sat must be provided higher than 14.8 V may not be output even under error conditions. O Min Max 2.1 2.4 2.3 2.6 2.5 2.8 5 MG400Q2YS60A and VF among IGBT in CE (sat) 2002-09-06 ...
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... Gate-emitter voltage V 800 Common emitter 600 400 200 400 A 200 Gate-emitter voltage V 6 MG400Q2YS60A I – ( – 800 A 400 A ...
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... Common emitter 600 400 ±15 V 100 25° 125° 100 E off 25° 125°C 1 400 0 7 MG400Q2YS60A – 400 V 12 600 V 200 1000 2000 ...
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... C res Curves must be derated linearly with increase in temperature. 1 100 1 (V) Collector-emitter voltage 25°C 0.1 0.01 0.001 1200 0.001 (V) 8 MG400Q2YS60A E – I dsw 25° 125°C 100 200 300 400 Forward current I (A) F Safe-operating area 50 ms* 100 ms* 1 ms* 10 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MG400Q2YS60A 9 000707EAA 2002-09-06 ...