BSM150GB120DN2 Siemens Semiconductor Group, BSM150GB120DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM150GB120DN2
• Description: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
Semiconductor Group
C
tot
I
tot
C
= ( T
= ( T
1300
1100
1000
900
800
700
600
500
400
300
200
100
240
200
180
160
140
120
100
80
60
40
20
W
A
0
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0 , T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= ( V
K/W
10
10
10
10
10
10
10
10
10
= ( t
A
-1
-2
-3
-4
3
2
1
0
0
10
10
CE
0
-5
)
p
)
single pulse
10
p
10
-4
/ T
1
C
BSM 150 GB 120 DN2
= 25°C , T
10
-3
10
2
10
j
-2
IGBT
DC
150 °C
t p = 18.0µs
10
D = 0.50
Mar-28-1996
10
3
100 µs
1 ms
10 ms
V
t
-1
p
0.20
0.10
0.05
0.02
0.01
CE
V
s
10
0