BSM150GB120DN2 Siemens Semiconductor Group, BSM150GB120DN2 Datasheet - Page 5

• Manufacturer Part Number: BSM150GB120DN2
• Description: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
parameter: t
parameter: t
C
C
I
I
C
C
= f (V
= f (V
300
240
220
200
180
160
140
120
100
300
240
220
200
180
160
140
120
100
80
60
40
20
80
60
40
20
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
300
240
220
200
180
160
140
120
100
80
60
40
20
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
BSM 150 GB 120 DN2
2
j
= 125 °C
3
V
Mar-28-1996
V
CE
5