BSM150GB120DN2 Siemens Semiconductor Group, BSM150GB120DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM150GB120DN2
• Description: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

I
Cpuls
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
parameter: V
Cpuls
V
GE
GE
/ I
C
= ( Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
)
GE
)
200
,
= 15 V
400
T
= 150 A
j
= 150°C
400
600
600 V
800 1000 1200
600
800
800 V
Q
nC
V
V
Gate
CE
1100
1600
6
I
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
0
CE
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
BSM 150 GB 120 DN2
600
15
800
SC
20
1000 1200
25
10 µs, L < 25 nH
30
Mar-28-1996
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40