BSM50GD120DN2G Siemens Semiconductor Group, BSM50GD120DN2G Datasheet

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BSM50GD120DN2G

Manufacturer Part Number
BSM50GD120DN2G
Description
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Part Number:
BSM50GD120DN2G
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Part Number:
BSM50GD120DN2G
Quantity:
143
IGBT Power Module
Preliminary data
Semiconductor Group
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 50 GD 120 DN2G
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 78A
CE
I
C
1
Package
ECONOPACK 3
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM 50 GD 120 DN2G
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67070-A2521-A67
+ 150
± 20
1200
1200
2500
156
100
400
F
0.35
78
50
16
11
0.7
Aug-23-1996
Unit
V
A
W
°C
K/W
Vac
mm
-

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BSM50GD120DN2G Summary of contents

Page 1

IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DN2G Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

Page 2

Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage ° ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 450 W P 350 tot 300 250 200 150 100 Collector current ...

Page 5

Typ. output characteristics parameter µ ° 100 A 17V 15V 80 I 13V C 11V ...

Page 6

Typ. gate charge Gate parameter puls 600 120 160 200 240 280 ...

Page 7

Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 100 =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal ...

Page 9

Package Outlines Dimensions in mm Weight: 300 g Semiconductor Group Circuit Diagram 9 BSM 50 GD 120 DN2G Aug-23-1996 ...

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