BSM100GB120DN2 Siemens Semiconductor Group, BSM100GB120DN2 Datasheet
BSM100GB120DN2
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BSM100GB120DN2 Summary of contents
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IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ...
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Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 °C j 900 W P 700 tot 600 500 400 300 200 100 Collector current ...
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Typ. output characteristics parameter µ ° 200 A 17V 15V 160 I 13V C 11V 140 9V 7V 120 100 ...
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Typ. gate charge Gate parameter 100 A C puls 600 100 200 300 Reverse biased safe operating ...
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Typ. switching time inductive load , T = 125° par 600 ± ...
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Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal ...
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Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group Circuit Diagram 9 BSM 100 GB 120 DN2 Mar-29-1996 ...