BSM35GD120DN2 Infineon Technologies AG, BSM35GD120DN2 Datasheet
BSM35GD120DN2
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BSM35GD120DN2 Summary of contents
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... IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 DN2 BSM35GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ° ...
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Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 1 CE, C Collector-emitter saturation voltage ° ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 °C j 300 W 260 P 240 tot 220 200 180 160 140 120 100 Collector current I ...
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Typ. output characteristics parameter µ ° 17V 15V I 55 13V C 11V ...
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Typ. gate charge Gate parameter puls 600 120 Reverse biased safe operating ...
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Typ. switching time inductive load , T = 125° par 600 ± ...
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Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 1.5 ...
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Package Outlines Dimensions in mm Weight: 180 g Semiconductor Group Circuit Diagram 9 BSM 35 GD 120 DN2 Jan-09-1997 ...