BSM75GD120DN2 Siemens Semiconductor Group, BSM75GD120DN2 Datasheet
BSM75GD120DN2
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BSM75GD120DN2 Summary of contents
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IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 75 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
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Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage ° ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 °C j 550 W 450 P tot 400 350 300 250 200 150 100 Collector current ...
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Typ. output characteristics parameter µ ° 150 A 17V 15V I 120 13V C 11V 110 9V 7V 100 ...
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Typ. gate charge Gate parameter puls 600 100 200 300 Reverse biased safe operating ...
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Typ. switching time inductive load , T = 125° par 600 ± ...
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Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 150 A I 120 F 110 100 90 T =125° 0.0 0.5 1.0 1.5 ...
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Package Outlines Dimensions in mm Weight: 300 g Semiconductor Group Circuit Diagram 9 BSM 75 GD 120 DN2 Mar-27-1996 ...