BSM100GB120DLC Eupec GmbH, BSM100GB120DLC Datasheet

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BSM100GB120DLC

Manufacturer Part Number
BSM100GB120DLC
Description
eupec GmbH [IGBT-Modules]
Manufacturer
Eupec GmbH
Datasheet

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Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Mark Münzer
approved by: M. Hierholzer
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 09.09.1999
revision: 2
BSM100GD120DLC
P
P
C
C
C
V
C
C
C
R
CE
CE
CE
= 1 ms, T
= 1 ms
GE
=25°C, Transistor
= 100A, V
= 100A, V
= 4mA, V
= 80 °C
= 25 °C
= 0V, t
= 1200V, V
= 1200V, V
= 0V, V
= -15V...+15V
p
vj
vj
= 10ms, T
C
CE
GE
GE
GE
= 25°C,V
= 25°C,V
= 80°C
= V
= 20V, T
= 15V, T
= 15V, T
GE
GE
GE
= 0V, T
= 0V, T
, T
Vj
CE
CE
vj
vj
= 125°C
vj
vj
= 25V, V
= 25V, V
= 25°C
= 25°C
= 25°C
= 125°C
vj
vj
1(8)
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C,nom.
I
I
I
C
C
I
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
CES
I
GES
I
2
C
ies
res
tot
F
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
1200
typ.
1,71
0,42
100
160
200
650
100
200
500
2,5
2,1
2,4
5,5
1,1
6,5
10
-
Seriendatenblatt_BSM100GD120DLC.xls
max.
500
400
2,6
2,9
6,5
-
-
-
-
kA
kV
nF
nF
nA
W
V
A
A
A
V
A
A
V
V
V
C
A
A
2
s

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BSM100GB120DLC Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) 200 180 Tj = 25°C 160 Tj = 125°C 140 120 100 0,0 0,5 1,0 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 200 180 VGE ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 200 180 160 140 120 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 200 180 160 140 120 ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 28 Eoff 24 Eon Erec Schaltverluste (typisch) Switching losses (typical) 40 Eoff 35 Eon Erec ...

Page 7

Technische Information / Technical Information IGBT-Module BSM100GD120DLC IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 1 0,1 0,01 0,001 0,001 0, [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode i Sicherer Arbeitsbereich ...

Page 8

Technische Information / Technical Information IGBT-Module BSM100GD120DLC IGBT-Modules Econo 3 3. IS8 118.11 94.5 119 121.5 99 19.05 = 76.2 19.05 3. ...

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