IRAMS10UP60BPBF International Rectifier Corp., IRAMS10UP60BPBF Datasheet

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IRAMS10UP60BPBF

Manufacturer Part Number
IRAMS10UP60BPBF
Description
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
Parameter
V
V
I
I
I
F
P
V
T
T
T
Absolute Maximum Ratings
O
O
O
PWM
J
J
CES
+
D
ISO
@ T
@ T
(IGBT & Diodes)
(Driver IC)
/ V
C
C
=25°C
=100°C
RRM
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Pulsed RMS Phase Current (Note 2)
PWM Carrier Frequency
Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
Description
-40 to +150
-40 to +150
0.5 to 1.0
Values
2000
600
450
10
15
20
27
5
Rev.100507
Units
V
kHz
Nm
°C
W
RMS
V
A
1

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IRAMS10UP60BPBF Summary of contents

Page 1

Absolute Maximum Ratings Parameter IGBT/Diode Blocking Voltage CES RRM + Positive Bus Input Voltage =25°C RMS Phase Current (Note =100°C RMS Phase Current (Note ...

Page 2

... IRAMS10UP60BPbF Internal Electrical Schematic - IRAMS10UP60BPbF V (10 (12) VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) FLT-EN(21) I (22) TRIP THERMISTOR V (13 (14 (23 VS1 LO1 16 VB2 HO2 VS2 VB3 HO3 ...

Page 3

... Zero Gate Voltage Collector I CES Current V Diode Forward Voltage Drop FM Bootstrap Diode Forward Voltage V BDFM Drop R Bootstrap Resistor Value BR ∆R /R Bootstrap Resistor Tolerance BR BR Current Protection Threshold I BUS_TRIP (positive going) www.irf.com IRAMS10UP60BPbF Min Max Units --- 4.5 --- +0.3 B1,2,3 B1,2,3 -0.3 600 -0.3 20 Lower of (V +15V) or -0.3 SS Trip V +0 ...

Page 4

... IRAMS10UP60BPbF Inverter Section Switching Characteristics @ T Symbol Parameter E Turn-On Switching Loss ON E Turn-Off Switching Loss OFF E Total Switching Loss TOT E Diode Reverse Recovery energy REC t Diode Reverse Recovery time RR E Turn-On Switching Loss ON E Turn-off Switching Loss OFF E Total Switching Loss TOT ...

Page 5

... COM =10µA TRIP IN =0V IN =0V IN =5V =0V =5V =0V Min Typ Max --- 590 --- --- 700 --- 100 200 --- 100 150 220 290 360 --- 40 75 --- --- 1.75 --- 7.7 --- --- 6.7 --- IRAMS10UP60BPbF and are TRIP Min Typ Max Units 3.0 --- --- V --- --- 0.8 V 10.6 11.1 11.6 V 10.4 10.9 11.4 V --- 0.2 --- V 4.9 5.2 5.5 V --- --- 165 µA --- --- 3.35 mA --- --- 60 µA --- ...

Page 6

... IRAMS10UP60BPbF Thermal and Mechanical Characteristics Symbol Parameter R Thermal resistance, per IGBT th(J-C) R Thermal resistance, per Diode th(J-C) R Thermal resistance, C-S th(C-S) C Creepage Distance D Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter R Resistance Shunt T Temperature Coefficient Coeff P Power Dissipation Shunt T Temperature Range Range Internal NTC - Thermistor Characteristics ...

Page 7

... Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 6µs 1µs for at least 6µs. This value is the worst-case condition with very low IRAMS10UP60BPbF 6 50% t fltclr 7 ...

Page 8

... IRAMS10UP60BPbF Module Pin-Out Description Pin Name W V IN1 H 16 IN2 H 17 IN3 L 18 IN1 L 19 IN2 L 20 IN3 21 FLT/Enable 22 I TRIP Description ...

Page 9

... Typical Application Connection IRAMS10UP60BPbF DC BUS CAPACITORS +5V PGND +15V +5V 0.1mF 47kohm DGND Temp Monitor CONTROLLER Fault 1K DGND 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor- mance ...

Page 10

... IRAMS10UP60BPbF 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency + V =400V , T 7 150°C J 6.0 Sinusoidal Modulation 5.0 4.0 3.0 2.0 1.0 0.0 1 Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency + V =400V 100° 110° 120° PWM Frequency - kHz =150°C, Modulation Depth=0.8, PF=0.6 ...

Page 11

... A RMS = 4 A RMS PWM Switching Frequency - kHz =150°C, Modulation Depth=0.8, PF=0 Output Phase Current - A RMS =150°C, Modulation Depth=0.8, PF=0.6 J IRAMS10UP60BPbF T = 150°C J Sinusoidal Modulation kHz PWM kHz PWM kHz PWM ...

Page 12

... IRAMS10UP60BPbF 160 150 140 130 120 110 100 150° Sinusoidal Modulation Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase 160 T avg. = 1.2363 150 140 130 120 110 100 Internal Thermistor Temperature Equivalent Read Out - °C Figure 8 ...

Page 13

... Thermistor Temperature - ° +15V COM 3.3µ PWM Frequency - kHz IRAMS10UP60BPbF THERM THERM THERM THERM THERM Ω °C Ω °C Ω 4397119 25 100000 90 7481 3088599 30 79222 95 6337 2197225 35 63167 ...

Page 14

... IRAMS10UP60BPbF Figure 11. Switching Parameter Definitions V CE 50 Figure 11a. Input to Output Propagation turn-on Delay Time Figure 11c. Diode Reverse Recovery 50 OFF Figure 11b. Input to Output Propagation ...

Page 15

... Hin1,2,3 IC Driver Lo Lin1,2,3 Figure CT1. Switching Loss Circuit Ho Hin1,2,3 1k 10k Driver Lin1,2,3 5VZD Lo IN Figure CT2. S.C.SOA Circuit Ho Hin1,2,3 1k 10k Driver 5VZD Lin1,2 Figure CT3. R.B.SOA Circuit www.irf.com + V U,V U,V U,V IRAMS10UP60BPbF ...

Page 16

... IRAMS10UP60BPbF Package Outline 027-E2D24 IRAMS10UP60B note 1 Standard pin leadforming option Notes: Dimensions Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Tollerances ±0.5mm, unless otherwise stated For mounting instruction, see AN1049 16 note 3 note 2 www.irf.com ...

Page 17

... Tollerances ±0.5mm, unless otherwise stated IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRAMS10UP60BPbF note 3 For mounting instruction see AN-1049 Data and Specifications are subject to change without notice Visit us at www.irf.com for sales contact information ...

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