APT50M85JVFR Advanced Power Technology, APT50M85JVFR Datasheet

APT50M85JVFR

Manufacturer Part Number

APT50M85JVFR

Description

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Manufacturer

Advanced Power Technology

Datasheet

1.APT50M85JVFR.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT50M85JVFR

Manufacturer:

NANYA

Quantity:

1 400

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT50M85JVFR

Manufacturer:

APT

Quantity:

Current page: 1 of 4
Download datasheet (77Kb)

Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode

• Lower Leakage

• Faster Switching

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

USA

405 S.W. Columbia Street

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

Symbol

DS(on)

D(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

POWER MOS V

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25 C

• 100% Avalanche Tested

• Popular SOT-227 Package

= 25 C

> I

D(on)

, I

= 30V, V

Bend, Oregon 97702 -1035

F-33700 Merignac - France

= V

= 0.8 V

x R

= 0V, I

= 1mA)

DSS

DS(on)

= 10V, 0.5 I

, V

DSS

= 250 A)

Max, V

= 0V)

, V

= 0V)

D[Cont.]

= 0V, T

All Ratings: T

= 10V)

FREDFET

)

= 125 C)

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

APT50M85JVFR

500V 50A 0.085

= 25 C unless otherwise specified.

MIN

500

APT50M85JVFR

-55 to 150

ISOTOP

1300

TYP

500

200

500

300

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

FREDFET

0.085

2000

MAX

500

100

"UL Recognized"

Ohms

Amps

Watts

Amps

UNIT

W/ C

UNIT

Volts

Related parts for APT50M85JVFR

APT50M85JVFR Summary of contents

Page 1

... GS D APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France APT50M85JVFR 500V 50A 0.085 ® "UL Recognized" ® ISOTOP D FREDFET unless otherwise specified. C APT50M85JVFR 500 50 200 30 40 500 4 -55 to 150 300 30 30 1300 MIN TYP MAX 500 50 0 ...

Page 2

... 125 See MIL-STD-750 Method 3471 4 Starting [Cont.], 200V RECTANGULAR PULSE DURATION (SECONDS) APT50M85JVFR MIN TYP MAX 9000 10800 1240 1740 500 750 390 535 42 65 DSS 170 255 DSS ...

Page 3

... APT50M85JVFR 150 V GS =7V, 10V & 15V 120 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 150 - +25 C 120 +125 > (ON (ON)MAX. 90 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE ...

Page 4

... SOT-227 (ISOTOP ) Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,256,583 4,748,103 5,283,202 APT50M85JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+ 0.2 0.4 0.6 0.8 1.0 1.2 1 ...

Related keywords

APT50M85JVFR datasheet
APT50M85JVFR data sheet
APT50M85JVFR pdf datasheet
APT50M85JVFR component
APT50M85JVFR part
APT50M85JVFR distributor
APT50M85JVFR RoHS
APT50M85JVFR datasheet download