IXFN44N50 IXYS Corporation, IXFN44N50 Datasheet
IXFN44N50
Manufacturer Part Number
IXFN44N50
Description
HiPerFET Power MOSFETs
Manufacturer
IXYS Corporation
Datasheet
1.IXFN48N50.pdf
(4 pages)
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Part Number:
IXFN44N50
Manufacturer:
IXYS
Quantity:
27
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Part Number:
IXFN44N50U2
Manufacturer:
IXYS
Quantity:
492
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
C1 - 184
DM
AR
D25
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
D
ISOL
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
ISOL
C
C
C
C
J
C
J
J
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
150 C, R
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
I
DM
1 mA
TM
, di/dt 100 A/ s, V
GS
, I
D
D
DC
D
DSS
= 1 mA
= 8 mA
G
300 s, duty cycle d 2 %
, V
= 0.5 • I
= 2
DS
t = 1 min
t = 1 s
= 0
D25
GS
JM
= 1 M
DD
44N50
48N50
44N50
48N50
T
T
44N50
48N50
J
J
(T
V
= 25 C
= 125 C
DSS
rr
J
= 25 C, unless otherwise specified)
,
IXFK / IXFN 44 N50
IXFK / IXFN 48 N50
Maximum Ratings
0.9/6
IXFK
500
500
176
192
500
300
min.
500
20
30
44
48
24
30
10
5
Characteristic Values
-
-
-
-55 ... +150
-55 ... +150
2
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
150
IXFN
500
500
176
192
520
20
30
44
48
24
30
30
5
max.
-
0.12
0.10
200
400
4
2
V/ns
mA
mJ
V~
V~
nA
W
V
V
V
V
A
A
A
A
A
V
V
g
C
C
C
C
A
TO-264 AA
(IXFK)
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
l
Advantages
l
l
l
miniBLOC, SOT-227 B (IXFN)
S
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
G
G
International standard packages
Molding epoxies meet UL 94 V-0
SOT-227B miniBLOC with aluminium
nitride isolation
Low R
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
flammability classification
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
D
t
500 V
500 V
rr
V
S
E153432
DSS
DS (on)
© 2000 IXYS All rights reserved
D
S
250 ns
HDMOS
44 A 0.12
48 A 0.10
I
D25
D = Drain
TAB = Drain
TM
G
(TAB)
process
93001I (07/00)
S
R
DS(on)
D
S
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IXFN44N50 Summary of contents
Page 1
TM HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 150 C DSS 150 DGR J ...
Page 2
Symbol Test Conditions 0.5 • pulse test D25 C iss MHz oss rss ...
Page 3
Fig. 1 Output Characteristics 100 V = 10V 25° Volts DS Fig vs. Drain Current DS(on) ...
Page 4
Fig.7 Gate Charge Characteristic Curve 250V 24A 10mA 100 150 200 250 300 350 400 Gate Charge - ...