APT50M50JVR Advanced Power Technology, APT50M50JVR Datasheet

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APT50M50JVR

Manufacturer Part Number
APT50M50JVR
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer
Advanced Power Technology
Datasheet
1.APT50M50JVR.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT50M50JVR
Manufacturer:
MSC
Quantity:
1 560
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT50M50JVR
Manufacturer:
APT
Quantity:
25
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
C
DS
APT Website - http://www.advancedpower.com
1
= V
C
= 25 C
• Popular SOT-227 Package
• 100% Avalanche Tested
= 25 C
> I
4
GS
GS
D(on)
2
DS
DS
, I
GS
= 30V, V
Bend, Oregon 97702-1035
F-33700 Merignac - France
D
(V
= V
= 0.8 V
x R
= 0V, I
= 5mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250 A)
GS
Max, V
= 0V)
®
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
= 125 C)
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
500V 77A 0.050
APT50M50JVR
C
®
= 25 C unless otherwise specified.
MIN
500
77
2
APT50M50JVR
-55 to 150
ISOTOP
3600
TYP
500
308
700
300
5.6
G
77
77
50
30
40
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
®
0.050
MAX
100
500
100
"UL Recognized"
4
D
S
Amps
Watts
Amps
Amps
Ohms
UNIT
W/ C
UNIT
Volts
Volts
Volts
Volts
mJ
nA
C
A

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APT50M50JVR Summary of contents

Page 1

... APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France APT50M50JVR 500V 77A 0.050 ® "UL Recognized" ISOTOP ® unless otherwise specified. C APT50M50JVR 500 77 308 30 40 700 5.6 -55 to 150 300 77 50 3600 MIN TYP MAX 500 77 0.050 ...

Page 2

... S D[Cont /dt = 100A D[Cont See MIL-STD-750 Method 3471 4 Starting 1.21mH RECTANGULAR PULSE DURATION (SECONDS) APT50M50JVR MIN TYP MAX 16300 19600 2210 3090 850 1275 675 1000 95 140 DSS 320 480 DSS ...

Page 3

... APT50M50JVR 250 V GS =7V, 10V & 15V 200 150 100 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 250 -55 C 200 V DS > (ON (ON)MAX. 150 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 +125 C 50 ...

Page 4

... W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT50M50JVR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+ 0.4 0.8 1.2 1.6 2 SOURCE-TO-DRAIN VOLTAGE (VOLTS ...

Page 5

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