APT5010JVRU3 Microsemi Corporation, APT5010JVRU3 Datasheet
APT5010JVRU3
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APT5010JVRU3 Summary of contents
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... E Single Pulse Avalanche Energy AS IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT5010JVRU3 V = 500V DSS R = 100mΩ max @ Tj = 25°C DSon I = 44A @ Tc = 25°C D Application • ...
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... Reverse Recovery Time I Maximum Reverse Recovery Current RRM Q Reverse Recovery Charge rr t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM APT5010JVRU3 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 500V 125° 0V,V = 400V j ...
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... Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical Performance Curve MOSFET APT5010JVRU3 Min MOSFET Diode 2500 -55 www.microsemi.com Typ Max Unit 0.28 °C/W 1.21 20 ...
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... Typical Diode Performance Curve APT5010JVRU3 www.microsemi.com 5 – 7 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT5010JVRU3 W=4.1 (.161) W=4.3 (.169) H=4 ...