BSM100GB120DN2K Infineon Technologies AG, BSM100GB120DN2K Datasheet

no-image

BSM100GB120DN2K

Manufacturer Part Number
BSM100GB120DN2K
Description
1200V/145A IGBT power module
Manufacturer
Infineon Technologies AG
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM100GB120DN2K
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM100GB120DN2K
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM100GB120DN2K
Quantity:
50
Company:
Part Number:
BSM100GB120DN2K
Quantity:
80
BSM 100 GB 120 DN2K
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GB 120 DN2K
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 145A
CE
I
C
1
Package
HALF-BRIDGE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2107-A70
+ 150
± 20
1200
1200
2500
145
100
290
200
700
0.18
0.36
F
20
11
Oct-21-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

Related parts for BSM100GB120DN2K

BSM100GB120DN2K Summary of contents

Page 1

BSM 100 GB 120 DN2K IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

Page 2

BSM 100 GB 120 DN2K Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...

Page 3

BSM 100 GB 120 DN2K Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 V, ...

Page 4

BSM 100 GB 120 DN2K Power dissipation = ( tot C parameter: T 150 °C j 750 W 650 600 P tot 550 500 450 400 350 300 250 200 150 100 ...

Page 5

BSM 100 GB 120 DN2K Typ. output characteristics parameter µ ° 200 A 17V 15V 160 I 13V C 11V 140 9V 7V 120 100 ...

Page 6

BSM 100 GB 120 DN2K Typ. gate charge = ( Gate parameter 100 A C puls 600 100 200 300 ...

Page 7

BSM 100 GB 120 DN2K Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 100 GB 120 DN2K Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 ...

Page 9

BSM 100 GB 120 DN2K Package Outlines Dimensions in mm Weight: 250 g Circuit Diagram 9 Oct-21-1997 ...

Page 10

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

Related keywords