APT5010JLLU3 Microsemi Corporation, APT5010JLLU3 Datasheet

no-image

APT5010JLLU3

Manufacturer Part Number
APT5010JLLU3
Description
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
IF
R
V
IF
V
E
E
I
I
P
DSon
I
DM
AR
RMS
DSS
ISOTOP
AR
AS
D
GS
A V
D
MOSFET Power Module
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
ISOTOP
S
®
Buck chopper
D
D
A
Parameter
A
S
www.microsemi.com
Duty cycle=0.5
Application
Features
Benefits
V
R
I
D
DSS
DSon
= 41A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power MOS 7
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
RoHS Compliant
-
-
-
-
-
-
= 500V
= 100mΩ max @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic reverse diode
Avalanche energy rated
Very rugged
T
T
T
Tc = 80°C
c
c
c
= 25°C
= 80°C
= 25°C
®
Package (SOT-227)
APT5010JLLU3
DSon
®
MOSFETs
Max ratings
1600
±30
500
164
100
378
41
30
41
50
30
39
Unit
mΩ
mJ
W
V
A
V
A
A
1 – 7

Related parts for APT5010JLLU3

APT5010JLLU3 Summary of contents

Page 1

... E Single Pulse Avalanche Energy AS IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT5010JLLU3 V = 500V DSS R = 100mΩ max @ Tj = 25°C DSon I = 41A @ Tc = 25°C D Application • ...

Page 2

... Reverse Recovery Time I Maximum Reverse Recovery Current RRM Q Reverse Recovery Charge rr t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM APT5010JLLU3 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 500V 125° 0V,V = 400V j ...

Page 3

... Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical MOSFET Performance Curve APT5010JLLU3 Min MOSFET Diode 2500 -55 www.microsemi.com Typ Max Unit 0.33 °C/W 1.21 ...

Page 4

... APT5010JLLU3 www.microsemi.com 4 – 7 ...

Page 5

... Typical Diode Performance Curve APT5010JLLU3 www.microsemi.com 5 – 7 ...

Page 6

... APT5010JLLU3 www.microsemi.com 6 – 7 ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT5010JLLU3 W=4.1 (.161) W=4.3 (.169) H=4 ...

Related keywords