MG300Q2YS61

Manufacturer Part NumberMG300Q2YS61
ManufacturerTOSHIBA Semiconductor CORPORATION
MG300Q2YS61 datasheet
 


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TOSHIBA IGBT Module Silicon N Channel IGBT
High Power Switching Applications
Motor Control Applications
High input impedance
·
·
High speed: t
= 0.3 µs (max)
f
Inductive load
·
Low saturation voltage: V
CE (sat)
Enhancement-mode
·
Includes a complete half bridge in one package.
·
The electrodes are isolated from case.
·
Equivalent Circuit
C1
G1
E1
G2
E2
E2
(Tc = = = = 25°C)
Maximum Ratings
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC (Tc = 80°C)
Collector current
DC (Tc = 80°C)
Forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Terminal
Screw torque
Mounting
MG300Q2YS61
= 2.6 V (max)
JEDEC
E1/C2
JEITA
TOSHIBA
Weight: 430 g (typ.)
Symbol
Rating
V
1200
CES
V
±20
GES
I
300
C
I
300
F
P
2700
C
T
150
j
-40 to 125
T
stg
2500
V
Vrms
isol
(AC 1 minute)
¾
3
¾
3
1
MG300Q2YS61
2-109C4A
Unit
V
V
A
A
W
°C
°C
N·m
N·m
2002-08-29
Unit: mm

MG300Q2YS61 Summary of contents

  • Page 1

    ... TOSHIBA Weight: 430 g (typ.) Symbol Rating V 1200 CES V ±20 GES I 300 C I 300 F P 2700 C T 150 j -40 to 125 T stg 2500 V Vrms isol (AC 1 minute) ¾ 3 ¾ MG300Q2YS61 ― ― 2-109C4A Unit °C °C N·m N·m 2002-08-29 Unit: mm ...

  • Page 2

    ... di/dt = 1500 A/ms Transistor stage R th (j-c) Diode stage (off MG300Q2YS61 Min Typ. Max = 0 V ¾ ¾ ±500 = 0 V ¾ ¾ 6.0 7.0 8 25°C ¾ 2.1 2 125°C ¾ 2.7 3 MHz ¾ ¾ 25000 ¾ ...

  • Page 3

    ... V Rank > CE (sat (sat) Rank Symbol Min 21 1.80 22 1.90 23 2.00 24 2.10 25 2.20 26 2.30 27 2.40 < Mark Position > 21D TOSHIBA MG300Q2YS61 Low side < V Rank > Max Rank Symbol 2.10 D 2.20 E 2.30 F 2.40 G 2.50 2.60 2.70 22E High side 3 MG300Q2YS61 Min Max 1.9 2.2 2.1 2.4 2.3 2.6 2.5 2.8 2002-08-29 ...

  • Page 4

    ... Gate-emitter voltage V 600 Common emitter 500 400 300 200 600 100 Gate-emitter voltage V 4 MG300Q2YS61 I – Common emitter 125° ( – 300 600 ...

  • Page 5

    ... 600 300 ± 100 100 E off t d (off 250 300 MG300Q2YS61 – 400 12 200 1000 1500 2000 2500 Charge Q (nC) G Switching loss – 25° ...

  • Page 6

    ... Tc = 25°C 0.3 0.1 0.03 0.01 0.003 0.001 0.0003 0.001 1200 1400 (V) 6 MG300Q2YS61 E – I dsw F Common cathode 600 2 ± 25° 125°C 50 100 150 200 250 300 Forward current I (A) F Safe operating area ...

  • Page 7

    ... Short circuit soa 10000 1000 100 ± 125° 200 400 600 800 1000 Collector-emitter voltage V CE 1200 1400 (V) 7 MG300Q2YS61 2002-08-29 ...

  • Page 8

    ... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 MG300Q2YS61 000707EAA 2002-08-29 ...