MG300Q2YS61 TOSHIBA Semiconductor CORPORATION, MG300Q2YS61 Datasheet

no-image

MG300Q2YS61

Manufacturer Part Number
MG300Q2YS61
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
High Power Switching Applications
Motor Control Applications
·
·
·
·
·
·
Equivalent Circuit
Maximum Ratings
High input impedance
High speed: t
Low saturation voltage: V
Enhancement-mode
Includes a complete half bridge in one package.
The electrodes are isolated from case.
Collector-emitter voltage
Gate-emitter voltage
Collector current
Forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Characteristics
G1
G2
E1
E2
Inductive load
f
= 0.3 µs (max)
DC (Tc = 80°C)
DC (Tc = 80°C)
Mounting
(Tc = = = = 25°C)
Terminal
C1
E2
CE (sat)
TOSHIBA IGBT Module Silicon N Channel IGBT
MG300Q2YS61
= 2.6 V (max)
Symbol
E1/C2
V
V
V
T
GES
P
CES
I
¾
¾
I
T
isol
stg
C
F
C
j
(AC 1 minute)
-40 to 125
Rating
1200
2700
2500
±20
300
300
150
3
3
1
Weight: 430 g (typ.)
JEDEC
JEITA
TOSHIBA
Vrms
Unit
N·m
N·m
°C
°C
W
V
V
A
A
2-109C4A
MG300Q2YS61
2002-08-29
Unit: mm

Related parts for MG300Q2YS61

MG300Q2YS61 Summary of contents

Page 1

... TOSHIBA Weight: 430 g (typ.) Symbol Rating V 1200 CES V ±20 GES I 300 C I 300 F P 2700 C T 150 j -40 to 125 T stg 2500 V Vrms isol (AC 1 minute) ¾ 3 ¾ MG300Q2YS61 ― ― 2-109C4A Unit °C °C N·m N·m 2002-08-29 Unit: mm ...

Page 2

... di/dt = 1500 A/ms Transistor stage R th (j-c) Diode stage (off MG300Q2YS61 Min Typ. Max = 0 V ¾ ¾ ±500 = 0 V ¾ ¾ 6.0 7.0 8 25°C ¾ 2.1 2 125°C ¾ 2.7 3 MHz ¾ ¾ 25000 ¾ ...

Page 3

... V Rank > CE (sat (sat) Rank Symbol Min 21 1.80 22 1.90 23 2.00 24 2.10 25 2.20 26 2.30 27 2.40 < Mark Position > 21D TOSHIBA MG300Q2YS61 Low side < V Rank > Max Rank Symbol 2.10 D 2.20 E 2.30 F 2.40 G 2.50 2.60 2.70 22E High side 3 MG300Q2YS61 Min Max 1.9 2.2 2.1 2.4 2.3 2.6 2.5 2.8 2002-08-29 ...

Page 4

... Gate-emitter voltage V 600 Common emitter 500 400 300 200 600 100 Gate-emitter voltage V 4 MG300Q2YS61 I – Common emitter 125° ( – 300 600 ...

Page 5

... 600 300 ± 100 100 E off t d (off 250 300 MG300Q2YS61 – 400 12 200 1000 1500 2000 2500 Charge Q (nC) G Switching loss – 25° ...

Page 6

... Tc = 25°C 0.3 0.1 0.03 0.01 0.003 0.001 0.0003 0.001 1200 1400 (V) 6 MG300Q2YS61 E – I dsw F Common cathode 600 2 ± 25° 125°C 50 100 150 200 250 300 Forward current I (A) F Safe operating area ...

Page 7

... Short circuit soa 10000 1000 100 ± 125° 200 400 600 800 1000 Collector-emitter voltage V CE 1200 1400 (V) 7 MG300Q2YS61 2002-08-29 ...

Page 8

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 MG300Q2YS61 000707EAA 2002-08-29 ...

Related keywords