MG300Q2YS61 TOSHIBA Semiconductor CORPORATION, MG300Q2YS61 Datasheet - Page 2

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MG300Q2YS61

Manufacturer Part Number
MG300Q2YS61
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MG300Q2YS61
Manufacturer:
NEC
Quantity:
101
Part Number:
MG300Q2YS61
Manufacturer:
TOSHIBA
Quantity:
28
Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Forward voltage
Reverse recovery time
Thermal resistance
Note 1: Switching time and reverse recovery time test circuit and timing chart
I
-V
F
Characteristics
GE
I
I
rr
F
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
R
R
G
G
t
rr
I
C
90% I
50% I
(Ta = = = = 25°C)
rr
rr
I
L
F
V
V
V
CE
Symbol
R
CE (sat)
t
t
GE (off)
I
I
d (on)
d (off)
C
th (j-c)
GES
CES
t
t
V
t
on
off
t
t
ies
rr
r
f
F
V
CC
V
V
I
I
V
V
Inductive load
V
I
V
R
I
I
di/dt = 1500 A/ms
Transistor stage
Diode stage
C
C
C
F
F
GE
CE
GE
CE
CC
GE
G
= 300 A, V
= 300 A, V
= 300 mA, V
= 300 A,
= 300 A
2
= 2.7 W
= 1200 V, V
= 10 V, V
= ±20 V, V
= 15 V
= 600 V
= ±15 V
V
GE
I
0
C
0
Test Condition
GE
GE
t
GE
d (off)
CE
CE
= 0 V
= -15 V,
GE
= 0 V, f = 1 MHz
= 5V
= 0 V
= 0 V
90%
Tc = 25°C
Tc = 125°C
Tc = 25°C
Tc = 125°C
t
off
t
(Note 1)
90%
f
10%
Min
6.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
MG300Q2YS61
t
10%
d (on)
25000
Typ.
7.0
2.1
2.7
0.3
0.2
0.5
0.5
0.1
0.6
2.4
2.2
0.2
¾
¾
¾
¾
10%
t
on
2002-08-29
0.045
0.100
±500
Max
8.0
2.6
3.2
0.3
2.8
¾
¾
¾
¾
¾
¾
¾
¾
1
90%
t
r
°C/W
Unit
mA
nA
pF
ms
ms
V
V
V

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