MG300Q2YS61 TOSHIBA Semiconductor CORPORATION, MG300Q2YS61 Datasheet - Page 6

• Manufacturer Part Number: MG300Q2YS61
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100000
1000
50000
30000
10000
100
1000
5000
3000
1000
10
100
500
300
10
0
0.1
0
T j < = 125°C
V GE = ±15 V
R G = 2.7 W
Common emitter
f = 1 MHz
200
0.3
50
Collector-emitter voltage V
Collector-emitter voltage V
0.5
400
Forward current I
100
Reverse bias soa
1
600
I
rr
C – V
, t
150
rr
3
800
– I
CE
Common cathode
V CC = 600 V
R G = 2.7 W
V GE = ±15 V
I rr
5
F
F
200
10
1000
(A)
CE
CE
: T j = 25°C
: T j = 125°C
t rr
1200
(V)
(V)
250
30
Cres
Cies
Coes
50
1400
300
100
6
0.0003
0.003
0.001
3000
1000
0.03
0.01
300
100
0.1
0.3
0.1
10
30
10
0.001
1
3
1
0
1
* Single nonrepetitive
Curves must be derated
lineary with increase in
temperature.
Tc = 25°C
pulse Tc = 25°C
I C max (continuous)
I C max (pulsed) *
DC operation
3
50
Collector-emitter voltage V
0.01
Forward current I
10
100
Pulse width t
Safe operating area
R
E
30
th (t)
dsw
150
0.1
– I
– t
Common cathode
V CC = 600 V
R G = 2.7 W
V GE = ±15 V
1 ms*
100
F
w
w
F
200
Transistor stage
MG300Q2YS61
(s)
300
Diode stage
(A)
CE
100 ms*
: T j = 25°C
: T j = 125°C
1
50 ms*
(V)
250
1000
2002-08-29
3000
300
10