MG300Q2YS65H TOSHIBA Semiconductor CORPORATION, MG300Q2YS65H Datasheet - Page 5

• Manufacturer Part Number: MG300Q2YS65H
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
1600
1200
0.01
800
400
0.1
0.001
0
6
5
4
3
2
1
0
1
0
0
Tc = 25°C
Common emitter
R L = 2 W
Tc = 25°C
V CC < = 900 V
T j < = 125°C
t w = 5 ms
200
Collector-emitter voltage V
V CE = 0 V
600
0.01
400
Pulse width t
Short circuit SOA
Charge Q
V
200 V
1200
CE
R
600
, V
th (t)
400 V
0.1
GE
G
600 V
– t
800
1800
– Q
w
w
(nC)
Transistor stage
G
Diode stage
(s)
1000
CE
1
2400
(V)
1200
3000
1400
10
16
12
8
4
0
5
100000
10000
1000
1000
100
100
0.1
10
0.01
1
0
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
T j < = 125°C
V GE = ±15 V
R G = 2.7 W
Collector-emitter voltage V
Collector-emitter voltage V
0.1
500
Reverse bias SOA
C – V
1
CE
MG300Q2YS65H
1000
CE
CE
10
Cres
C ies
C oes
(V)
(V)
2003-03-11
1500
100