QM200DY-2HB Mitsumi Electronics, Corp., QM200DY-2HB Datasheet

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... C2E1 4– 6.5 3 – M6 LABEL MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE • I Collector current ........................ 200A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 21 ...

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... CE V =600V, I =200A I =0.4A, –I =4. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE Ratings 1000 1000 1000 7 200 200 1560 10 2000 –40~+150 –40~+125 2500 1 ...

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... – (A) B MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) V =10V =25° =125°C j – ...

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... VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL =25° =125° 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE QM200DY-2HB INSULATED TYPE I =–4A B2 800 1200 1600 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C 1.2 1.6 2.0 2.4 –V (V) CEO Feb.1999 ...

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... I =0. –I = FORWARD CURRENT QM200DY-2HB INSULATED TYPE =25° =125°C j – ...