IXGN50N60BD2 IXYS Corporation, IXGN50N60BD2 Datasheet

IXGN50N60BD2

Manufacturer Part Number

IXGN50N60BD2

Description

Manufacturer

IXYS Corporation

Datasheet

1.IXGN50N60BD2.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXGN50N60BD2

Manufacturer:

SAKEN

Quantity:

5 000

Current page: 1 of 5
Download datasheet (132Kb)

HiPerFAST

with HiPerFRED

Buck & boost configurations

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

CES

GES

GE(th)

CE(sat)

CES

SSOA

(RBSOA) Clamped inductive load, L = 30 mH

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

Weight

C25

C90

FAVM

FRM

RRM

stg

CES

CGR

GES

GEM

Test Conditions

= 250 mA, V

= 0.8 • V

= 0 V

= 0 V, V

= I

Test Conditions

Continuous

Transient

Mounting torque

Terminal connection torque (M4)

C90

z<10 ms; pulse width limited by T

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 25°C, 1 ms

= 25°C

= 70°C; rectangular, d = 50%

= 25°C

= 15 V, T

, V

CES

IGBT

= 15 V

= ±20 V

= V

= 0 V

= 125°C, R

= 1 MW

= 25°C

= 125°C

= 10 W

= 25°C, unless otherwise specified)

...BD2

IXGN 50N60BD2

IXGN 50N60BD3

min.

600

2.5

Characteristic Values

-40 ... +150

@ 0.8 V

Maximum Ratings

typ.

1.5/13 Nm/lb.in.

= 100

±20

±30

600

200

250

600

150

300

CES

max.

±100

...BD3

200

2.5

1 mA

°C

Features

• International standard package

• Aluminium nitride isolation

• Isolation voltage 3000 V~

• Very high current, fast switching

• MOS Gate turn-on

• Low collector-to-case capacitance

• Low package inductance (< 10 nH)

• Molding epoxies meet UL 94 V-0

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Buck converters

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density

IXGN50N60BD2

1 = Emitter; 2 = Gate

3 = Collector; 4 = Diode cathode

IXGN50N60BD3

1 = Emitter/Diode Cathode; 2 = Gate

3 = Collector; 4 = Diode anode

SOT-227B, miniBLOC

C25

miniBLOC

- high power dissipation

IGBT & FRED diode

- drive simplicity

- easy to drive and to protect

flammability classification

CES

CE(sat)

E 153432

= 600 V

= 2.5 V

= 150 ns

75 A

98502C (8/99)

1 - 5

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IXGN50N60BD2 Summary of contents

Page 1

... A C25 V = 2.5 V CE(sat 150 ns fi SOT-227B, miniBLOC E 153432 IXGN50N60BD2 Emitter Gate 3 = Collector Diode cathode A IXGN50N60BD3 Emitter/Diode Cathode Gate 3 = Collector Diode anode V A Features A • International standard package W miniBLOC °C • Aluminium nitride isolation °C - high power dissipation • ...

Page 2

Symbol Test Conditions Pulse test, t £ 300 ms, duty cycle £ C90 CE C ies ...

Page 3

25° Volts CE Fig. 1. Saturation Voltage Characteristics 100 T = 125° 15V 13V 80 11V 60 40 ...

Page 4

T = 125° 4 Amperes C Fig. 7. Dependence =50A 250V ...

Page 5

A 140 120 25° 100 T =100° =150° Fig. 12 Forward current I versus 2.0 1.5 K ...

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