HAT2068R-EL-E Renesas Electronics Corporation., HAT2068R-EL-E Datasheet

no-image

HAT2068R-EL-E

Manufacturer Part Number
HAT2068R-EL-E
Description
HAT2068R-EL-ESilicon N Channel Power MOS FET Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2068R-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT2068R-EL-E
Manufacturer:
RENESAS
Quantity:
17 495
HAT2068R
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Rev.5.00 Sep 07, 2005 page 1 of 6
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS (on)
= 7 m typ. (at V
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
GS
= 10 V)
8
7
6
5
1 2
3 4
G
4
D
5 6 7 8
S S S
1 2 3
D D D
(Previous: ADE-208-1225C)
1, 2, 3
4
5, 6, 7, 8
REJ03G1176-0500
Source
Gate
Drain
Sep 07, 2005
Rev.5.00

Related parts for HAT2068R-EL-E

HAT2068R-EL-E Summary of contents

Page 1

... HAT2068R Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance typ. ( (on) GS Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Rev.5.00 Sep 07, 2005 page ...

Page 2

... HAT2068R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes duty cycle 2. When using the glass epoxy board (FR4 40 ...

Page 3

... HAT2068R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. ...

Page 4

... HAT2068R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 – Case Temperature Body-Drain Diode Reverse Recovery Time 100 µ 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics ...

Page 5

... HAT2068R 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.5.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width θ ...

Page 6

... Ordering Information Part Name HAT2068R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page Package Name MASS[Typ.] FP-8DAV 0.085g ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

Related keywords