MRF466

Manufacturer Part NumberMRF466
DescriptionNPN SILICON RF POWER TRANSISTOR
ManufacturerAdvanced Semiconductor, Inc.
MRF466 datasheet
 


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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
ASI MRF466
The
is Designed for
power amplifier applications from 2.0
to 30MHz.
FEATURES:
• P
= 15 dB min. at 40 W/30 MHz
G
• IMD
= -30 dBc max. at 40 W
3
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
6.0 A
C
V
65 V
CBO
V
35 V
CEO
P
175 W @ T
= 25 °C
DISS
C
T
-65 °C to +200 °C
J
T
-65 °C to +150 °C
STG
θ
1.0 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
NONETEST CONDITIONS
BV
I
= 100 mA
CEO
C
BV
I
= 100 mA
CES
C
BV
I
= 1.0 mA
EBO
E
I
V
= 28 V
CES
E
h
V
= 5.0 V
FE
CE
C
V
= 28 V
ob
CB
V
= 28 V
G
CE
PE
P
= 40 W (PEP)
OUT
η
IMD
3
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
PACKAGE STYLE .380 4L FLG
(PEP)
I
= 0.5 A
C
f = 1.0 MHz
I
= 20 mA
f = 30 MHz
CQ
Specifications are subject to change without notice.
MRF466
.112 x 45°
B
A
Ø.125 NOM.
E
FULL R
C
J
.125
B
E
C
D
E
F
I
H
G
MINIMUM
MAXIMUM
DIM
inches / mm
inches / mm
.220 / 5.59
.230 / 5.84
A
.785 / 19.94
B
.720 / 18.29
.730 / 18.54
C
.970 / 24.64
.980 / 24.89
D
.385 / 9.78
E
.004 / 0.10
.006 / 0.15
F
.085 / 2.16
.105 / 2.67
G
.160 / 4.06
.180 / 4.57
H
.280 / 7.11
I
.240 / 6.10
.255 / 6.48
J
MINIMUM TYPICAL MAXIMUM
35
65
4.0
5
10
80
125
200
15
19
40
-40
-30
UNITS
V
V
V
mA
---
pF
dB
%
dBc
REV. A
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