BSS229

Manufacturer Part NumberBSS229
ManufacturerSiemens Semiconductor Group
BSS229 datasheet
 


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SIPMOS Small-Signal Transistor
V
250 V
DS
I
0.07 A
D
R
100
DS(on)
N channel
Depletion mode
High dynamic resistance
Available grouped in
V
GS(th)
Type
Ordering
Tape and Reel
Code
Information
BSS 229 Q62702-S600 E6296: 1500 pcs/reel;
2 reels/carton; source first
Maximum Ratings
Parameter
Drain-source voltage
R
Drain-gate voltage,
= 20 k
GS
Gate-source voltage
Gate-source peak voltage, aperiodic
T
Continuous drain current,
Pulsed drain current,
T
T
Max. power dissipation,
Operating and storage temperature range
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
Pin Configuration Marking Package
1
G
Symbol
V
DS
V
DGR
V
GS
V
gs
I
= 25 ˚C
A
D
= 25 ˚C
I
A
D puls
P
= 25 ˚C
A
tot
T
,
T
j
stg
R
thJA
1
BSS 229
2
1
2
3
D
S
SS229
TO-92
Values
Unit
250
V
250
14
20
0.07
A
0.21
0.63
W
– 55 … + 150
˚C
200
K/W
E
55/150/56
3
04.97