mrf7s18170h Freescale Semiconductor, Inc, mrf7s18170h Datasheet
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... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 1805 - 1880 MHz AVG Volts ...
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... Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S18170HR3 MRF7S18170HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...
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... Delay = 170 W CW, ΔΦ out ΔG ΔP1dB Min Typ Max = 1400 mA, 1805 - 1880 MHz Bandwidth — 25 — — 0.4 — — 2.5 — — 4.2 — — 15 — — 0.015 — — 0.01 — MRF7S18170HR3 MRF7S18170HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... Z7 1.110″ x 1.360″ Microstrip Z8 0.480″ x 1.360″ Microstrip Z9 0.060″ x 1.098″ Microstrip Figure 1. MRF7S18170HR3 Test Circuit Schematic — 880 Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values — 880 Part C1 0.8 pF Chip Capacitor C2, C8, C9 6.8 pF Chip Capacitors C3 100 pF Chip Capacitor ...
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... C18 C19 Figure 2. MRF7S18170HR3 Test Circuit Component Layout — 880 RF Device Data Freescale Semiconductor C20 C13 C10 C17 C11 C12 C9 C8 C15 C14 C6 C7 C16 C5 MRF7S18170H Rev. 4 MRF7S18170HR3 MRF7S18170HSR3 5 ...
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... Z7 1.110″ x 1.360″ Microstrip Z8 0.480″ x 1.360″ Microstrip Z9 0.060″ x 1.098″ Microstrip Figure 3. MRF7S18170HSR3 Test Circuit Schematic — 880S Table 6. MRF7S18170HSR3 Test Circuit Component Designations and Values — 880S Part C1 0.8 pF Chip Capacitor C2, C8, C9 6.8 pF Chip Capacitors C3 100 pF Chip Capacitor ...
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... C18 C19 Figure 4. MRF7S18170HSR3 Test Circuit Component Layout — 880S RF Device Data Freescale Semiconductor C20 C13 C10 C17 C11 C12 C9 C8 C15 C14 C6 C7 C16 C5 MRF7S18170H Rev. 4 MRF7S18170HR3 MRF7S18170HSR3 7 ...
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... Vdc 1835 MHz 1845 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 7. Two - Tone Power Gain versus Output Power MRF7S18170HR3 MRF7S18170HSR3 8 TYPICAL CHARACTERISTICS Vdc (Avg.), I = 1400 mA DD out DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 7 ...
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... Figure 10. Intermodulation Distortion Products versus Tone Spacing Actual 25 20 105 120 −30_C 25_C T = −30_C C 85_C 25_C 85_C Vdc 1400 1840 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S18170HR3 MRF7S18170HSR3 100 400 9 ...
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... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 16. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S18170HR3 MRF7S18170HSR3 10 TYPICAL CHARACTERISTICS 1400 1840 MHz ...
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... MHz W W 1760 1.93 - j6.00 1.13 - j2.65 1780 1.95 - j6.10 1.05 - j2.45 1800 1.99 - j6.18 0.97 - j2.29 1820 1.95 - j6.22 0.90 - j2.12 1840 1.85 - j6.30 0.85 - j2.00 1860 1.71 - j6.26 0.81 - j1.84 1880 1.55 - j6.25 0.75 - j1.70 1900 1.39 - j6.20 0.70 - j1.54 1920 1.23 - j6.15 0.67 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Output Matching Network MRF7S18170HR3 MRF7S18170HSR3 11 ...
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... P , INPUT POWER (dBm) in NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Z source Ω 3dB 1.23 - j7.91 Figure 19. Pulsed CW Output Power versus Input Power MRF7S18170HR3 MRF7S18170HSR3 12 61 Ideal 60 59 P3dB = 54.65 dBm (290 P1dB = 54.05 dBm 56 (254 Actual ...
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... E 0.035 0.045 0.89 S (INSULATOR) F 0.003 0.006 0.08 H 0.057 0.067 1. 0.170 0.210 4.32 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF7S18170HR3 MRF7S18170HSR3 5.08 1.14 0.15 1.70 5.33 13 ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date • Initial Release of Data Sheet 0 Oct. 2006 MRF7S18170HR3 MRF7S18170HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF7S18170H Rev. 0, 10/2006 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...