TISP3070T3BJR-S

Manufacturer Part NumberTISP3070T3BJR-S
DescriptionDUAL BIDIRECTIONAL PROTECTOR
ManufacturerBourns, Inc.
TISP3070T3BJR-S datasheets

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Dual High Current Protectors in a Space Efficient
Package
- 2 x 100 A 10/560 Current Rating
- Modified 3-pin SMB (DO-214AA) Package
50 % Space Saving over Two SMBs
- Y Configurations with Two SMB Packages
2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ
2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
V
DRM
Device
V
TISP3070T3
58
TISP3080T3
65
TISP3095T3
75
TISP3115T3
90
TISP3125T3
100
TISP3145T3
120
TISP3165T3
135
TISP3180T3
145
TISP3200T3
155
TISP3219T3
180
TISP3250T3
190
TISP3290T3
220
TISP3350T3
275
TISP3395T3
320
.......................................UL Recognized Component
Description
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the
telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have
been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC
60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (V
in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less
which use multiple SMBs.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V
V
are limited and will not exceed the breakover voltage, V
DRM
switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted cur-
rent falls below the holding current, I
, level the device switches off and restores normal system operation.
H
How To Order
Device
Package
TIS P 3xxxT3BJ
B J (3-pin modified S M B/DO-214A A J-B e nd)
Insert xxx value corr esponding to pr otectio n voltages of 070, 080, 095, 115, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3xxxT3BJ Overvoltage Protector Series
SMB Package (Top View)
Device Symbol
V
(BO)
V
70
80
95
115
125
145
Rated for International Surge Wave Shapes
165
180
Wave Shape
200
219
2/10
250
8/20
290
10/160
350
10/700
395
10/560
10/1000
, level. If sufficient current flows due to the overvoltage, the device
(BO)
Carrier
R (Embossed T a pe Reeled)
TISP3070T3BJ THRU TISP3395T3BJ
1
2
3
MDXXCJA
1
3
(T or R)
(T or R)
SD3TA A
2
(G)
I
PPSM
Standard
GR-1089-CORE
250
IEC 61000-4-5
250
TIA/EIA-IS-968 (FCC Part 68)
150
ITU-T K.20/.21/.45
120
TIA/EIA-IS-968 (FCC Part 68)
100
GR-1089-CORE
80
= ±275 V). Housed
DRM
, see Figure 1. Voltages above
DRM
Order As
TISP3xxxT3BJR-S
A

TISP3070T3BJR-S Summary of contents