APT5010LLL Advanced Power Technology, APT5010LLL Datasheet
APT5010LLL
Manufacturer Part Number
APT5010LLL
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT5010LLL.pdf
(5 pages)
Available stocks
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Part Number
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Company:
Part Number:
APT5010LLL
Manufacturer:
APT
Quantity:
15 500
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
DS(on)
E
D(on)
GS(th)
I
,T
I
GSS
P
DSS
GSM
T
DSS
I
DM
AR
GS
D
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
2
• Increased Power Dissipation
• Easier To Drive
• Popular
(V
DS
C
DS
APT Website - http://www.advancedpower.com
= V
1
= 25°C
C
> I
= 25°C
4
GS
GS
D(on)
2
DS
, I
DS
®
= ±30V, V
GS
D
(V
by significantly lowering R
= 500V, V
= 400V, V
T-MAX™
x R
= 2.5mA)
R
= 0V, I
GS
DS(on)
= 10V, I
MOSFET
D
DS
= 250µA)
GS
Max, V
GS
= 0V)
or TO-264 Package
= 0V, T
= 0V)
D
= 23A)
GS
All Ratings: T
= 10V)
C
= 125°C)
DS(ON)
500V 46A 0.100
C
APT5010B2LL
= 25°C unless otherwise specified.
APT5010LLL
500
MIN
46
3
B2LL
-55 to 150
APT5010
T-MAX™
1600
TYP
±30
±40
500
184
500
300
4.0
46
46
50
0.100
±100
MAX
100
500
5
TO-264
G
LLL
Ohms
Amps
Watts
Amps
Amps
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
µA
nA
°C
D
S
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APT5010LLL Summary of contents
Page 1
... 400V 0V ±30V 0V 2.5mA APT Website - http://www.advancedpower.com APT5010B2LL APT5010LLL 500V 46A 0.100 B2LL T-MAX™ DS(ON) = 25°C unless otherwise specified. C APT5010 500 46 184 ±30 ±40 500 4.0 -55 to 150 300 46 50 1600 MIN ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
Page 3
Typical Performance Curves RC MODEL 0.0132 0.0789 Junction Power temp. ( ”C) (Watts) 0.0811 0.230 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 V DS > (ON (ON)MAX. 90 250 µSEC. PULSE TEST @ ...
Page 4
Typical Performance Curves 184 OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 46A ...
Page 5
Gate Voltage d(on Drain Current 90 Drain Voltage 10 % Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60B D.U.T. Figure 20, Inductive ...