APT5010B2 Advanced Power Technology, APT5010B2 Datasheet

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APT5010B2

Manufacturer Part Number
APT5010B2
Description
Manufacturer
Advanced Power Technology
Datasheet

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Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
GSM
P
T
DSS
DM
I
AR
GS
D
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
, I
DS
®
= ±30V, V
GS
D
by significantly lowering R
(V
= 400V, V
= 500V, V
= 2.5mA)
R
= 0V, I
GS
MOSFET
= 10V, I
D
DS
= 250µA)
GS
GS
= 0V)
= 0V, T
= 0V)
D
= 20.5A)
All Ratings: T
C
= 125°C)
DS(ON)
C
500V 41A 0.100
= 25°C unless otherwise specified.
MIN
500
3
APT5010JLL
-55 to 150
ISOTOP
1600
TYP
3.03
±30
±40
500
164
378
300
41
41
35
®
0.100
±100
MAX
100
500
5
"UL Recognized"
G
Amps
Amps
Ohms
Watts
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S

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APT5010B2 Summary of contents

Page 1

POWER MOS 7 ® Power MOS new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® and Q . Power MOS 7 combines ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

Typical Performance Curves RC MODEL Junction temp. (°C) Power (watts) Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 V DS > (ON (ON)MAX. 90 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE ...

Page 4

OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 41A D 12 ...

Page 5

Gate Voltage d(on Drain Current 90 Drain Voltage 10 % Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 D.U.T. Figure 20, Inductive ...

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