MG100Q2YK1

Manufacturer Part NumberMG100Q2YK1
ManufacturerTOSHIBA Semiconductor CORPORATION
MG100Q2YK1 datasheet
 
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TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H
High Power & High Speed Switching
Applications
High input impedance
·
·
Enhancement-mode
·
The electrodes are isolated from case.
Equivalent Circuit
E1
C1
G1 E1/C2
(Ta = = = = 25°C)
Maximum Ratings
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1 ms
DC
Forward current
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Terminal
Screw torque
Mounting
E2
E2
JEDEC
G2
JEITA
TOSHIBA
Weight: 255 g (typ.)
Symbol
Rating
V
1200
CES
±20
V
GES
I
100
C
I
200
CP
I
100
F
I
200
FM
P
690
C
T
150
j
-40 to 125
T
stg
2500
V
Isol
(AC 1 minute)
¾
3
N▪m
¾
3
1
MG100Q2YS65H
2-95A4A
Unit
V
V
A
A
W
°C
°C
V
2002-10-04
Unit: mm

MG100Q2YK1 Summary of contents

  • Page 1

    TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications High input impedance · · Enhancement-mode · The electrodes are isolated from case. Equivalent Circuit E1/C2 ( 25°C) ...

  • Page 2

    Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Turn-on time Switching time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance ...

  • Page 3

    I – (sat) 200 150 10 V 100 690 Common emitter Tc = 25° ...

  • Page 4

    Switching time – Common emitter : Tc = 25° 600 125° ± (on) 0.01 ...

  • Page 5

    – 1600 Common emitter 25°C 1200 800 200 V 600 V 400 V 400 0 0 200 400 600 Charge Q (nC) ...

  • Page 6

    RESTRICTIONS ON PRODUCT USE · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...