MG100Q2YL1 TOSHIBA Semiconductor CORPORATION, MG100Q2YL1 Datasheet
MG100Q2YL1
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MG100Q2YL1 Summary of contents
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TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications High input impedance · · Enhancement-mode · The electrodes are isolated from case. Equivalent Circuit E1/C2 ( 25°C) ...
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Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Turn-on time Switching time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance ...
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I – (sat) 200 150 10 V 100 690 Common emitter Tc = 25° ...
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Switching time – Common emitter : Tc = 25° 600 125° ± (on) 0.01 ...
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– 1600 Common emitter 25°C 1200 800 200 V 600 V 400 V 400 0 0 200 400 600 Charge Q (nC) ...
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RESTRICTIONS ON PRODUCT USE · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...