MG100Q2YL1 TOSHIBA Semiconductor CORPORATION, MG100Q2YL1 Datasheet - Page 4

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MG100Q2YL1

Manufacturer Part Number
MG100Q2YL1
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
0.01
0.01
100
0.1
0.1
0.1
10
1
1
1
10
0
1
Common emitter
V CC = 600 V
V GE = ±15 V
R G = 9.1 W
10
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Gate resistance R
Collector current I
Collector current I
Switching time – R
Switching time – I
Switching loss – I
t r
20
E dsw
30
30
10
t d (on)
E off
G
C
C
40
C
C
Common emitter
V CC = 600 V
I C = 100 A
V GE = ±15 V
G
Common emitter
V CC = 600 V
V GE = ±15 V
R G = 9.1 W
(A)
(9)
(A)
E on
: Tc = 25°C
: Tc = 125°C
t on
50
t on
t d (on)
t r
100
100
60
4
0.01
0.01
100
0.1
0.1
10
10
1
1
1
10
0
1
Common emitter
V CC = 600 V
V GE = ±15 V
R G = 9.1 W
Common emitter
V CC = 600 V
I C = 100 A
V GE = ±15 V
t off
Common emitter
V CC = 600 V
I C = 100 A
V GE = ±15 V
10
t d (off)
: Tc = 25°C
: Tc = 125°C
Gate resistance R
Gate resistance R
Collector current I
Switching time – R
Switching loss – R
Switching time – I
20
30
30
10
MG100Q2YS65H
G
G
C
E on
40
C
G
G
t d (off)
t f
(A)
(9)
(9)
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
50
E off
E dsw
2002-10-04
t f
t off
100
100
60

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