2SD1048 Sanyo Semiconductor Corporation, 2SD1048 Datasheet
2SD1048
Manufacturer Part Number
2SD1048
Description
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SD1048.pdf
(3 pages)
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Ordering number : ENN694F
Features
Specifications
( ) : 2SB815
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
* : The 2SB815, 2SD1048 are classified by 50mA h FE as follows :
Note : Marking : B (2SB815), X (2SD1048)
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
2SB815
2SD1048
•
•
h FE rank : 6, 7 (2SB815), 6, 7, 8 (2SD1048)
Ultrasmall package allows miniaturization
in end products.
Large current capacity (I C =0.7A) and low-saturation
voltage.
200
200
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
B6
X6
SANYO Electric Co.,Ltd. Semiconductor Company
400
400
300
300
General-Purpose AF Amplifier Applications
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
h FE 1
h FE 2
Tstg
I CP
P C
I C
Tj
B7
X7
2SB815 / 2SD1048
V CB =(--)15V, I E =0
V EB =(--)4V, I C =0
V CE =(--)2V, I C =(--)50mA
V CE =(--)2V, I C =(--)500mA
600
600
41301 TS IM / 91098 HA (KT) / 8258MO / 4017 KI / 2173 KI, TS
450
Conditions
Package Dimensions
unit : mm
2018B
Conditions
X8
PNP / NPN Epitaxial Planar Silicon Transistors
900
1
0.4
0.95 0.95
2SB815 / 2SD1048
1.9
2.9
3
[2SB815 / 2SD1048]
(200*)200*
2
min
80
Ratings
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.16
typ
Ratings
Continued on next page.
--55 to +125
0 to 0.1
(600*)900*
max
(--)0.7
(--)1.5
(--)0.1
(--)0.1
(--)20
(--)15
(--)5
200
125
No.694-1/3
Unit
mW
Unit
V
V
V
A
A
C
C
A
A
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2SD1048 Summary of contents
Page 1
... Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Electrical Characteristics at Ta=25 C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain * : The 2SB815, 2SD1048 are classified by 50mA follows : 2SB815 200 B6 400 2SD1048 200 X6 400 Note : Marking : B (2SB815), X (2SD1048) ...
Page 2
... PNP, minus sign is omitted 1.0 10 100 Collector Current 2SB815 / 2SD1048 Symbol Conditions =(--)10V =(- -)50mA Cob V CB =(--)10V, f=1MHz V CE (sat =(--)5mA =(- -)0.5mA V CE (sat =(--)100mA =(--)10mA 800 2SB815 ...
Page 3
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2001. Specifications and information herein are subject to change without notice. 2SB815 / 2SD1048 300 =10 250 200 ...