MT4LC4M4B1DJ-6S Micron Semiconductor Products, MT4LC4M4B1DJ-6S Datasheet

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MT4LC4M4B1DJ-6S

Manufacturer Part Number
MT4LC4M4B1DJ-6S
Description
4Meg x 4, 5V FPM DRAM
Manufacturer
Micron Semiconductor Products
Datasheet
DRAM
FEATURES
• Industry-standard x4 pinout, timing, functions,
• High-performance, low-power CMOS silicon-gate
• Single power supply (+3.3V ±0.3V or +5V ±0.5V)
• All inputs, outputs and clocks are TTL-compatible
• Refresh modes: RAS#-ONLY, HIDDEN and CAS#-
• Optional self refresh (S) for low-power data
• 11 row, 11 column addresses (2K refresh) or
• FAST-PAGE-MODE (FPM) access
• 5V tolerant inputs and I/Os on 3.3V devices
OPTIONS
• Voltage
• Refresh Addressing
• Packages
• Timing
• Refresh Rates
NOTE: 1. The 4 Meg x 4 FPM DRAM base number differenti-
*Contact factory for availability
KEY TIMING PARAMETERS
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
SPEED
and packages
process
BEFORE-RAS# (CBR)
retention
12 row, 10 column addresses (4K refresh)
3.3V
5V
2,048 (2K) rows
4,096 (4K) rows
Plastic SOJ (300 mil)
Plastic TSOP (300 mil)
50ns access
60ns access
Standard Refresh
Self Refresh (128ms period)
-5
-6
2. The # symbol indicates signal is active LOW.
110ns
ates the offerings in one place—MT4LC4M4B1. The
fifth field distinguishes various options: B1
designates a 2K refresh and A1 designates a 4K
refresh for FPM DRAMs.
84ns
t
RC
t
MT4LC4M4B1DJ
50ns
60ns
RAC
Part Number Example:
20ns
35ns
t
PC
25ns
30ns
t
AA
MARKING
t
13ns
15ns
CAC
None
TG
LC
A1
B1
DJ
-5
-6
S *
C
30ns
40ns
t
RP
1
MT4LC4M4B1, MT4C4M4B1
MT4LC4M4A1, MT4C4M4A1
For the latest data sheet, please refer to the Micron Web
site:
4 MEG x 4 FPM DRAM PART NUMBERS
**NC/A11
PART NUMBER
MT4LC4M4B1DJ-6
MT4LC4M4B1DJ-6 S 3.3V
MT4LC4M4B1TG-6
MT4LC4M4B1TG-6 S 3.3V
MT4LC4M4A1DJ-6
MT4LC4M4A1DJ-6 S 3.3V
MT4LC4M4A1TG-6
MT4C4M4A1TG-6 S 3.3V
MT4C4M4B1DJ-6
MT4C4M4B1DJ-6 S
MT4C4M4B1TG-6
MT4C4M4B1TG-6 S
MT4C4M4A1DJ-6
MT4C4M4A1DJ-6 S
MT4C4M4A1TG-6
MT4C4M4A1TG-6 S
**NC on 2K refresh and A11 on 4K refresh options.
RAS#
WE#
DQ0
DQ1
V
V
A10
CC
24/26-Pin SOJ
A0
A1
A2
A3
www.micronsemi.com/mti/msp/html/datasheet.html
CC
PIN ASSIGNMENT (Top View)
1
2
3
4
5
6
8
9
10
11
12
13
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.3V
3.3V
3.3V
3.3V
V
5V
5V
5V
5V
5V
5V
5V
5V
26
25
24
23
22
21
19
18
17
16
15
14
CC
ADDRESSING PACKAGE REFRESH
V
DQ3
DQ2
CAS#
OE#
A9
A8
A7
A6
A5
A4
V
SS
SS
REFRESH
**NC/A11
2K
2K
2K
4K
4K
4K
4K
2K
2K
2K
2K
4K
4K
4K
4K
2K
RAS#
WE#
DQ0
DQ1
24/26-Pin TSOP
V
A10
V
A0
A1
A2
A3
CC
CC
FPM DRAM
4 MEG x 4
1
2
3
4
5
6
8
9
10
11
12
13
TSOP
TSOP
TSOP
TSOP
TSOP
TSOP
TSOP
TSOP
SOJ
SOJ
SOJ
SOJ
SOJ
SOJ
SOJ
SOJ
©2000, Micron Technology, Inc.
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
26
25
24
23
22
21
19
18
17
16
15
14
Self
Self
Self
Self
Self
Self
Self
Self
V
DQ3
DQ2
CAS#
OE#
A9
A8
A7
A6
A5
A4
V
SS
SS

Related parts for MT4LC4M4B1DJ-6S

MT4LC4M4B1DJ-6S Summary of contents

Page 1

... DQ1 WE# RAS# **NC/A11 A10 V MARKING refresh and A11 on 4K refresh options MEG x 4 FPM DRAM PART NUMBERS DJ TG PART NUMBER MT4LC4M4B1DJ-6 -5 MT4LC4M4B1DJ-6 S 3.3V -6 MT4LC4M4B1TG-6 MT4LC4M4B1TG-6 S 3.3V None MT4LC4M4A1DJ MT4LC4M4A1DJ-6 S 3.3V MT4LC4M4A1TG-6 MT4C4M4A1TG-6 S 3.3V MT4C4M4B1DJ-6 MT4C4M4B1DJ-6 S MT4C4M4B1TG-6 MT4C4M4B1TG-6 S MT4C4M4A1DJ-6 MT4C4M4A1DJ-6 S MT4C4M4A1TG-6 MT4C4M4A1TG-6 S ...

Page 2

GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid- state memory containing 16,777,216 bits organized configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits ...

Page 3

FUNCTIONAL BLOCK DIAGRAM – 2K REFRESH WE# CAS# NO. 2 CLOCK GENERATOR COLUMN- ADDRESS 11 A0 BUFFER(11 REFRESH A3 CONTROLLER REFRESH A7 COUNTER A10 ROW- ADDRESS 11 BUFFERS (11) NO. 1 CLOCK ...

Page 4

ABSOLUTE MAXIMUM RATINGS* Voltage on V Pin Relative 3.3V............................................. ......... -1V to +4.6V 5V................................................ ............ -1V Voltage on NC, Inputs or I/O Pins Relative to V 3.3V............................................. ......... -1V to +5.5V 5V................................................ ............ -1V Operating Temperature, T ...

Page 5

I OPERATING CONDITIONS AND MAXIMUM LIMITS CC (Notes [Vcc (MIN) PARAMETER/CONDITION STANDBY CURRENT: TTL (RAS# = CAS STANDBY CURRENT: CMOS (non-“S” version only) (RAS# = CAS# = other inputs = V ...

Page 6

AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12) [Vcc (MIN) AC CHARACTERISTICS PARAMETER Access time from column address Column-address hold time (referenced to RAS#) Column-address setup time Row-address setup time Column address to WE# delay time ...

Page 7

AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12) [Vcc (MIN) AC CHARACTERISTICS PARAMETER Refresh period “S” version RAS# precharge time RAS# to CAS# precharge time RAS# precharge time exiting Self Refresh READ command hold time (referenced ...

Page 8

NOTES 1. All voltages referenced This parameter is sampled MHz dependent on output loading and cycle CC rates. Specified values are obtained with minimum cycle time and the outputs ...

Page 9

V IH RAS CRP V IH CAS ASR V IH ROW ADDR WE IOH DQ V IOL TIMING PARAMETERS -5 SYMBOL MIN MAX MIN ...

Page 10

V IH RAS CRP V IH CAS ASR V IH ADDR ROW WE IOH DQ V IOL TIMING PARAMETERS -5 SYMBOL MIN MAX MIN ...

Page 11

WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS ASR V IH ADDR ROW WE IOH DQ V IOL ...

Page 12

V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR V ROW WE IOH DQ OPEN V IOL V IH OE# ...

Page 13

V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WCS IOH DQ V IOL ...

Page 14

WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS RAD t ASR t RAH V IH ADDR V ROW WE RAC V IOH ...

Page 15

FAST-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP V IH CAS ASR t RAH V IH ADDR V ROW WE TIMING PARAMETERS -5 ...

Page 16

V IH RAS CRP V IH CAS ASR V IH ADDR RAS RPC CAS ...

Page 17

V IH RAS CRP V IH CASL#/CASH ASR t RAH V IH ADDR ROW IOH DQx V IOL TIMING PARAMETERS -5 SYMBOL MIN MAX MIN t ...

Page 18

RAS RPC CSR V IH CAS WRP TIMING PARAMETERS -5 SYMBOL MIN MAX MIN t CHD ...

Page 19

PIN #1 INDEX .050 (1.27) TYP .600 (15.24) TYP .037 (0.94) MAX DAMBAR PROTRUSION SEATING PLANE NOTE: 1. All dimensions in inches (millimeters) 2. Package width and length do not include mold ...

Page 20

PIN #1 INDEX .050 (1.27) TYP 1. All dimensions in inches (millimeters) MAX or typical where noted. NOTE: 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per ...

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