MB84VD22182EB-90-PBS Fujitsu, MB84VD22182EB-90-PBS Datasheet
MB84VD22182EB-90-PBS
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MB84VD22182EB-90-PBS Summary of contents
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... FUJITSU SEMICONDUCTOR DATA SHEET Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M ( 8/ 16) FLASH MEMORY & 16) STATIC RAM MB84VD2218XEB MB84VD2218XEE FEATURES • Power supply voltage of 2 3.3 V • High performance maximum access time (Flash maximum access time (SRAM) • ...
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MB84VD2218XEB/EE (Continued) 1.FLASH MEMORY • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes Host system can program or erase in one bank, then immediately and simultaneously read from the other bank. Zero latency between read and ...
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MB84VD2218XEB/EE PIN ASSIGNMENT A10 B10 N.C. N. N.C. WE CE2s N.C. WP/ACC RESET C4 D4 LBs UBs C3 D3 ...
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MB84VD2218XEB/EE PIN DESCRIPTION Pin Name Address Inputs (Common Address Inputs (Flash) – Address Input (SRAM Data Inputs/Outputs (Common CEf Chip Enable (Flash) ...
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MB84VD2218XEB/EE BLOCK DIAGRAM –1 WP/ACC RESET CEf CIOf SA LBs UBs WE OE CE1s CE2s CIOs /MB84VD2219XEB/EE -85/ bit Flash Memory DQ ...
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MB84VD2218XEB/EE DEVICE BUS OPERATIONS Table 1. 1 User Bus Operations (Flash=Word mode; CIOf CEf CE1s CE2s Operation Full Standby Output Disable Read ...
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MB84VD2218XEB/EE Table 1. 2 User Bus Operations (Flash=Word mode; CIOf CEf CE1s CE2s LBs Operation Full Standby Output Disable ...
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MB84VD2218XEB/EE Table 1. 3 User Bus Operations (Flash=Byte mode; CIOf CEf CE1s CE2s DQ Operation Full Standby Output Disable Read from Flash ...
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... MB84VD2218XEB/EE FLEXIBLE SECTOR-ERASE ARCHITECTURE on FLASH MEMORY • Eight 4 K words and sixty three 32 K words • Individual-sector, multiple-sector or bulk-erase capability MB84VD22182EB/EE Bank 1 MB84VD22183EB/EE Bank 1 MB84VD22184EB/EE MB84VD22182EB/EE Bank 2 MB84VD22183EB/EE Bank 2 MB84VD22184EB/EE MB84VD2218XEB/EE Sector Architecture (Top Boot Block) /MB84VD2219XEB/EE -85/90 SA70 : 8KB (4KW) SA69 : 8KB (4KW) ...
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MB84VD2218XEB/EE (Continued) Bank 2 MB84VD22194EB/EE MB84VD22193EB/EE Bank 1 MB84VD22194EB/EE MB84VD22193EB/EE MB84VD2219XEB/EE Sector Architecture (Bottom Boot Block) 10 /MB84VD2219XEB/EE -85/90 SA70 : 64KB (32KW) SA69 : 64KB (32KW) SA68 : 64KB (32KW) SA67 : 64KB (32KW) SA66 : 64KB (32KW) SA65 ...
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... MB84VD2218XEB/EE Table 2.1 Sector Address Tables (MB84VD22182EB/EE) Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 ...
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MB84VD2218XEB/EE (Continued) Bank Sector Bank Address SA32 SA33 SA34 SA35 SA36 SA37 SA38 ...
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MB84VD2218XEB/EE Table 2.2 Sector Address Tables (MB84VD22192EB/EE) Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 0 ...
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MB84VD2218XEB/EE (Continued) Bank Sector Bank Address SA36 SA37 SA38 SA39 SA40 SA41 SA42 ...
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MB84VD2218XEB/EE Table 2.3 Sector Address Tables (MB84VD22183EB/EE) Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 0 ...
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MB84VD2218XEB/EE (Continued) Bank Sector Bank Address SA32 SA33 SA34 SA35 SA36 SA37 SA38 ...
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MB84VD2218XEB/EE Table 2.4 Sector Address Tables (MB84VD22193EB/EE) Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 0 ...
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MB84VD2218XEB/EE (Continued) Bank Sector Bank Address SA36 SA37 SA38 SA39 SA40 SA41 SA42 ...
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MB84VD2218XEB/EE Table 2.5 Sector Address Tables (MB84VD22184EB/EE) Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 0 ...
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MB84VD2218XEB/EE (Continued) Bank Sector Bank Address SA32 SA33 SA34 SA35 SA36 SA37 SA38 ...
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MB84VD2218XEB/EE Table 2.6 Sector Address Tables (MB84VD22194EB/EE) Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 0 ...
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MB84VD2218XEB/EE (Continued) Bank Sector Bank Address SA35 SA36 Bank 1 SA37 SA38 SA39 SA40 SA41 1 ...
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MB84VD2218XEB/EE Table 3.1 Sector Group Address (MB84VD2218XEB/EE) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 1 SGA6 0 1 SGA7 0 1 SGA8 0 ...
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MB84VD2218XEB/EE Table 3.2 Sector Group Address (MB84VD2219XEB/EE) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 0 0 SGA8 0 0 ...
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... MB84VD2218XEB/EE Table 4 Flash Memory Autoselect Codes Type Manufacturer’s Code Byte MB84VD22182EB MB84VD22182EE Word Byte MB84VD22192EB MB84VD22192EE Word Byte MB84VD22183EB MB84VD22183EE Word Device Code Byte MB84VD22193EB MB84VD22193EE Word Byte MB84VD22184EB MB84VD22184EE Word Byte MB84VD22194EB MB84VD22194EE Word Sector Group protect * for Byte mode. ...
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MB84VD2218XEB/EE Table 5 Flash Memory Command Definitions Bus First Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. * Read/Reset 1 1 XXXh Word 555h * Read/Reset 1 3 Byte AAAh Word 555h Autoselect 3 Byte AAAh Word ...
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MB84VD2218XEB/EE Address bits “H” or “L” for all address commands except for Program Address (PA Sector Address (SA) and Bank Address (BA). Bus operations are defined in Table 2 "User Bus Operations". ...
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... Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 28 /MB84VD2219XEB/EE -85/90 Symbol Min ...
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MB84VD2218XEB/EE ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Symbol Input Leakage Current I LI Output Leakage Current I LO RESET Inputs Leakage I LIT Current ACC Input Leakage I LIA Current Flash V Active Current CC1 (Read)* 1 ...
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MB84VD2218XEB/EE (Continued) Parameter Symbol Input Low Level V Input High Level V Voltage for Sector Protection, and Temporary V Sector Unprotection (RESET)* 4 Voltage for Program V ACC Acceleration (WP/ACC Output Low Voltage Level V Output High Voltage ...
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MB84VD2218XEB/ Characteristics • CE Timing Parameter CE Recover Time • Timing Diagram for alternating SRAM to Flash CEf CE1s CE2s /MB84VD2219XEB/EE -85/90 Symbol Test Setup JEDEC Standard — t — CCR t CCR t CCR -85/90 Value Unit ...
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MB84VD2218XEB/EE • Read Only Operations Characteristics (Flash) Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, ...
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MB84VD2218XEB/EE • Read Cycle (Flash) Address CEf Address CEf RESET High-Z DQ /MB84VD2219XEB/EE -85/ Address Stable t ACC OEH High Address Stable t ...
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MB84VD2218XEB/EE • Erase/Program Operations (Flash) Parameter Write Cycle Time Address Setup Time (WE to Addr.) Address Setup Time to CEf Low During Toggle Bit Polling Address Hold Time (WE to Addr.) Address Hold Time from High During ...
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MB84VD2218XEB/EE (Continued) Parameter V f Setup Time CC * Voltage Transition Time 2 * Rise Time Rise Time to V ACC Recover Time from RY/BY RESET Pulse Width Delay Time from Embedded Output Enable RESET High ...
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MB84VD2218XEB/EE • Write Cycle (WE control) (Flash) 3rd Bus Cycle Address 555h t WC CEf GHWL A0h DQ Notes the address of the memory location to be programmed the ...
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MB84VD2218XEB/EE • Write Cycle (CEf control) (Flash) Address GHEL CEf DQ Notes the address of the memory location to be programmed the data to be programmed at byte address ...
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MB84VD2218XEB/EE • AC Waveforms Chip/Sector Erase Operations (Flash) Address CEf GHWL VCS the sector address for Sector Erase. Address = 555h for Chip Erase. Note: These waveform ...
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MB84VD2218XEB/EE • AC Waveforms for Data Polling during Embedded Algorithm Operations (Flash) CEf Data Data In ( BUSY RY/ Valid Data (The device ...
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MB84VD2218XEB/EE • AC Waveforms for Toggle Bit during Embedded Algorithm Operations (Flash) Address CEf WE t OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). ...
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MB84VD2218XEB/EE • Back-to-back Read/Write Timing Diagram (Flash) Read t RC Address BA1 GHWL WE Valid DQ Output Note: This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address ...
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MB84VD2218XEB/EE • RY/BY Timing Diagram during Write/Erase Operations (Flash) CEf WE RY/BY • RESET, RY/BY Timing Diagram (Flash) WE RESET RY/BY 42 /MB84VD2219XEB/EE -85/90 The rising edge of the last write pulse Entire programming or erase operations t BUSY t ...
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MB84VD2218XEB/EE • Temporary Sector Unprotection (Flash VIDR t VCS RESET CEf WE RY/BY /MB84VD2219XEB/EE -85/90 t VLHT Program or Erase Command Sequence Unprotection Period -85/90 t VLHT 3V t VLHT 43 ...
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MB84VD2218XEB/EE • Extended Sector Protection (Flash VCS RESET t VLHT t VIDR Address CEf Data SPAX: Sector Group Address to be protected SPAY : Next Group ...
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MB84VD2218XEB/EE • Accelerated Program (Flash VACCR t VCS V ACC 3 V WP/ACC CEf WE RY/BY /MB84VD2219XEB/EE -85/90 t Program Command Sequence VLHT Acceleration period -85/90 t VLHT VLHT 45 ...
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MB84VD2218XEB/EE • Read Cycle (SRAM) Parameter Read Cycle Time Address Access Time Chip Enable (CE1s) Access Time Chip Enable (CE2s) Access Time Output Enable Access Time LBs, UBs to Output Valid Chip Enable (CE1s Low and CE2s High) to Output ...
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MB84VD2218XEB/EE • Read Cycle (SRAM) Address CE1s CE2s OE LBs, UBs DQ Note : WE remains “H” for the read cycle. /MB84VD2219XEB/EE -85/ CO1 t COE t CO2 OEE ...
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MB84VD2218XEB/EE • Write Cycle (SRAM) Parameter Write Cycle Time Write Pulse Width Chip Enable to End of Write Address valid to End of Write UBs, LBs to End of Write Address Setup Time Write Recovery Time WE Low to Output ...
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MB84VD2218XEB/EE • Write Cycle * 3 (WE control) (SRAM) Address CE1s CE2s LBs, UBs D OUT * CE1s goes “L” (or CE2s goes “H”) coincident with or after WE ...
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MB84VD2218XEB/EE • Write Cycle * 1 (CE1s control) (SRAM) Address CE1s CE2s LBs, UBs D OUT “H” during the write cycle, the outputs will remain at High- Because ...
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MB84VD2218XEB/EE • Write Cycle * 1 (CE2s Control) (SRAM) Address CE1s CE2s LBs, UBs D OUT “H” during the write cycle, the outputs will remain at High- ...
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MB84VD2218XEB/EE • Write Cycle * 1 (LBs, UBs Control) (SRAM) Address WE CE1s CE2s t LBs, UBs D OUT “H” during the write cycle, the outputs will remain at High- Because ...
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MB84VD2218XEB/EE ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle 100,000 DATA RETENTION CHARACTERISTICS Parameter Data Retention Supply Voltage Standby Current Chip Deselect to Data Retention Mode Time Recovery ...
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MB84VD2218XEB/EE • CE2s Controlled Data Retention Mode * 2 CE2s CDR V IL GND * CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to ...
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MB84VD2218XEB/EE ORDERING INFORMATION MB84VD2218 X EB DEVICE NUMBER/DESCRIPTION 32 Mega-bit (4 M 3.0 V-only Read, Program, and Erase 4 Mega-bit (512 K BOOT CODE SECTOR ARCHITECTURE 84VD2218 = Top sector 84VD2219 = Bottom sector /MB84VD2219XEB/EE -85/90 -85 -PBS PACKAGE TYPE ...
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... MB84VD2218XEB/EE PACKAGE DIMENSION 73-pin plastic FBGA (BGA-73P-M01) 11.60±0.10(.457±.004) INDEX-MARK AREA 0.10(.004) 1999 FUJITSU LIMITED B73001S-1C /MB84VD2219XEB/EE -85/90 +0.15 +.006 1.25 .049 –0.10 –.004 (Mounting height) 0.38±0.10 (Stand off) (.015±.004) 0.80(.031) 8.00±0.10 5.60(.220) (.315±.004) REF 7.20(.283) ...
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... Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have inherently a certain rate of failure. ...