MRF21090S Motorola, MRF21090S Datasheet

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MRF21090S

Manufacturer Part Number
MRF21090S
Description
2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
Manufacturer
Motorola
Datasheet

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Part Number:
MRF21090SR3
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FREESCALE
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications.
• Typical W–CDMA Performance for 2140 MHz, 28 Volts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 5
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for W–CDMA base station applications with frequencies from 2110
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 11.5 Watts
Efficiency — 16%
Gain — 12.2 dB
ACPR — –45 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
MRF21090
MRF21090S
MRF21090
MRF21090S
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
CASE 465C–02, STYLE 1
CASE 465B–03, STYLE 1
MRF21090S
(MRF21090S)
LATERAL N–CHANNEL
MRF21090
(MRF21090)
RF POWER MOSFETs
(NI–880S)
2170 MHz, 90 W, 28 V
(NI–880)
M3 (Minimum)
M4 (Minimum)
2 (Minimum)
1 (Minimum)
–65 to +150
+15, –0.5
Value
Class
MRF21090 MRF21090S
1.54
Max
0.65
270
200
65
Order this document
by MRF21090/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF21090S Summary of contents

Page 1

... CASE 465C–02, STYLE 1 (NI–880S) (MRF21090S) Symbol Value V 65 DSS V +15, –0 270 D 1.54 T –65 to +150 stg T 200 J Class MRF21090 2 (Minimum) MRF21090S 1 (Minimum) MRF21090 M3 (Minimum) MRF21090S M4 (Minimum) Symbol Max R 0.65 θJC MRF21090 MRF21090S by MRF21090/D Unit Vdc Vdc Watts W/°C °C °C Unit °C/W 1 ...

Page 2

... MHz) DD out DQ Output Mismatch Stress ( Vdc CW 750 mA 2110 MHz, DD out DQ VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF21090 MRF21090S 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I GSS I DSS GS(th) ...

Page 3

... Head Screws 0.438″ Long Endplates Brass Endplates for Copper Bedstead Bedstead Copper Bedstead/Heatsink Insert Copper Bedstead Insert  Raw PCB 0.030″ Glass Teflon , 2 oz Copper Clad 3″ x 5″ Arion RF Circuit 3″ x 5″ Copper Clad PCB Teflon MRF21090, CMR MRF21090 MRF21090S  ...

Page 4

... TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE) η Figure 3. Class AB Broadband Circuit Performance Figure 5. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF21090 MRF21090S 4 η Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power Figure 8 ...

Page 5

... Complex conjugate of the optimum load OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω Ω Ω MHz 2110 3.03 + j3.40 0.92 + j1.67 2140 3.02 + j3.46 0.97 + j1.80 2170 2.60 + j3.50 0.90 + j1.52 = Complex conjugate of the source impedance. impedance at a given power, voltage, IMD, bias current and frequency MRF21090 MRF21090S 5 ...

Page 6

... MRF21090 MRF21090S 6 NOTES MOTOROLA RF DEVICE DATA ...

Page 7

... CASE 465C–02 ISSUE A (NI–880S) (MRF21090S) INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF21090 MRF21090S 7 ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF21090 MRF21090S 8 MOTOROLA RF DEVICE DATA MRF21090/D ...

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