IS42S16400B-7TL Integrated Silicon Solution, IS42S16400B-7TL Datasheet

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... Rev. F 05/21/07 MAY 2007 OVERVIEW ISSI 's 64Mb Synchronous DRAM IS42S16400B is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. PIN CONFIGURATIONS ...

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... IS42S16400B GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode ...

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... IS42S16400B PIN FUNCTIONS Symbol Pin No. Type A0-A11 Input Pin 22, 35 BA0, BA1 20, 21 Input Pin CAS 17 Input Pin CKE 37 Input Pin CLK 38 Input Pin CS 19 Input Pin DQ0 10, DQ Pin DQ15 11,13, 42, 44, 45, 47, 48, 50, 51, 53 LDQM, ...

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... IS42S16400B FUNCTION (In Detail) A0-A11 are address inputs sampled during the ACTIVE (row-address A0-A11) and READ/WRITE command (A0-A7 with A10 defining auto PRECHARGE). A10 is sampled during a PRECHARGE command to determine if all banks are to be PRECHARGED (A10 HIGH) or bank selected by BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command ...

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... IS42S16400B enabled or disabled. AUTO PRECHARGE does not apply except in full-page burst mode. Upon completion of the READ or WRITE burst, a precharge of the bank/row that is addressed is automatically performed. AUTO REFRESH COMMAND This command executes the AUTO REFRESH operation. The row address and bank to be refreshed are automatically generated during this operation ...

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... IS42S16400B TRUTH TABLE – COMMANDS AND DQM OPERATION FUNCTION COMMAND INHIBIT (NOP) NO OPERATION (NOP) ACTIVE (Select bank and activate row) READ (Select bank/column, start READ burst) WRITE (Select bank/column, start WRITE burst) BURST TERMINATE PRECHARGE (Deactivate row in bank or banks) AUTO REFRESH or SELF REFRESH ...

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... IS42S16400B TRUTH TABLE – CKE (1-4) CURRENT STATE COMMANDn Power-Down X Self Refresh X Clock Suspend X (5) Power-Down COMMAND INHIBIT or NOP (6) Self Refresh COMMAND INHIBIT or NOP (7) Clock Suspend X All Banks Idle COMMAND INHIBIT or NOP All Banks Idle AUTO REFRESH Reading or Writing VALID See TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK n NOTES: 1. CKEn is the logic state of CKE at clock edge n ...

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... IS42S16400B NOTE: 1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Truth Table - CKE) and after t previous state was SELF REFRESH). 2. This table is bank-specific, except where noted; i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state ...

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... IS42S16400B TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK m CURRENT STATE COMMAND (ACTION) Any COMMAND INHIBIT (NOP/Continue previous operation) NO OPERATION (NOP/Continue previous operation) Idle Any Command Otherwise Allowed to Bank m Row ACTIVE (Select and activate row) Activating, READ (Select column and start READ burst) ...

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... IS42S16400B 7. READs or WRITEs to bank m listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. 8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the AUTO PRECHARGE command when its burst has been inter- rupted by bank m’s burst. ...

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... IS42S16400B ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage DD MAX V Maximum Supply Voltage for Output Buffer DDQ MAX V Input Voltage IN V Output Voltage OUT P Allowable Power Dissipation D MAX I Output Shorted Current CS T Operating Temperature OPR T Storage Temperature STG DC RECOMMENDED OPERATING CONDITIONS ...

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... IS42S16400B DC ELECTRICAL CHARACTERISTICS Symbol Parameter I Input Leakage Current IL I Output Leakage Current OL V Output High Voltage Level OH V Output Low Voltage Level OL I Operating Current (1,2) CC1 I Precharge Standby Current CC2P I (In Power-Down Mode) CC2PS I Precharge Standby Current CC2N I (In Non Power-Down Mode) ...

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... IS42S16400B AC ELECTRICAL CHARACTERISTICS Symbol Parameter t Clock Cycle Time CK3 t CK2 (4) t Access Time From CLK AC3 t AC2 t CLK HIGH Level Width CHI t CLK LOW Level Width CL t Output Data Hold Time OH3 t OH2 t Output LOW Impedance Time LZ (5) t Output HIGH Impedance Time ...

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... IS42S16400B OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t READ/WRITE command to READ/WRITE command CCD t CKE to clock disable or power-down entry mode CKED t CKE to clock enable or power-down exit setup mode PED t DQM to input data delay DQD t DQM to data mask during WRITEs ...

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... IS42S16400B FUNCTIONAL DESCRIPTION The 64Mb SDRAMs (1 Meg banks) are quad-bank DRAMs which operate at 3.3V and include a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit banks is organized as 4,096 rows by 256 columns by 16 bits. ...

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... IS42S16400B REGISTER DEFINITION Mode Register The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS\ latency, an operating mode and a write burst mode, as shown in MODE REGISTER DEFINITION. The mode register is programmed via the LOAD MODE ...

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... IS42S16400B Burst Length Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in MODE REGISTER DEFINITION. The burst length deter- mines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst ...

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... IS42S16400B CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge ...

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... IS42S16400B OPERATION BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be “opened.” This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Activating Specific Row Within Specific Bank). ...

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... IS42S16400B READS READ bursts are initiated with a READ command, as shown in the READ COMMAND diagram. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst ...

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... IS42S16400B same bank. The PRECHARGE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in the READ to PRECHARGE diagram for each possible CAS latency; data element either the last of a burst of four or the last desired of a longer burst ...

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... IS42S16400B Consecutive READ Bursts T0 CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - NOP NOP NOP READ BANK, COL n+1 D OUT OUT NOP NOP READ ...

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... IS42S16400B Random READ Accesses T0 CLK COMMAND READ BANK, ADDRESS COL CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. F 05/21/ READ READ READ BANK, BANK, BANK, COL b COL m COL OUT ...

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... IS42S16400B RW1 - READ to WRITE CLK DQM COMMAND ADDRESS DQ RW2 - READ to WRITE With Extra Clock Cycle T0 CLK DQM COMMAND READ BANK, ADDRESS COL READ NOP NOP NOP BANK, COL NOP NOP NOP OUT Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S16400B READ to PRECHARGE T0 T1 CLK COMMAND READ NOP BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. F 05/21/ NOP NOP NOP PRECHARGE cycle BANK ...

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... IS42S16400B READ Burst Termination T0 CLK COMMAND READ BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - BURST NOP NOP NOP TERMINATE n+1 D OUT OUT BURST NOP NOP TERMINATE ...

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... IS42S16400B WRITEs WRITE bursts are initiated with a WRITE command, as shown in WRITE Command diagram. WRITE Command CLK HIGH - Z CKE CS RAS CAS WE A0-A7 COLUMN ADDRESS A8, A9, A11 AUTO PRECHARGE A10 NO PRECHARGE BA0, BA1 BANK ADDRESS The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access ...

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... IS42S16400B WRITE Burst CLK COMMAND ADDRESS WRITE to WRITE COMMAND Random WRITE Cycles COMMAND ADDRESS WRITE NOP NOP BANK, COL n CLK WRITE NOP BANK, ADDRESS COL n DON'T CARE CLK WRITE WRITE WRITE ...

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... IS42S16400B WRITE to READ T0 CLK COMMAND WRITE BANK, ADDRESS COL WRITE to PRECHARGE ( CLK DQM COMMAND WRITE BANK a, ADDRESS COL Integrated Silicon Solution, Inc. — www.issi.com Rev. F 05/21/ NOP READ NOP BANK, COL n 15ns ...

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... IS42S16400B WRITE to PRECHARGE ( CLK DQM COMMAND WRITE BANK a, ADDRESS COL WRITE Burst Termination COMMAND ADDRESS 15ns NOP NOP PRECHARGE BANK (a or all n CLK BURST WRITE TERMINATE BANK, COL DON'T CARE Integrated Silicon Solution, Inc. — ...

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... IS42S16400B PRECHARGE The PRECHARGE command (see figure) is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (t the PRECHARGE command is issued. Input A10 deter- mines whether one or all banks are to be precharged, and in the case where only one bank precharged, inputs BA0, BA1 select the bank ...

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... IS42S16400B CLOCK SUSPEND Clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, “freezing” the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. ...

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... IS42S16400B BURST READ/SINGLE WRITE The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length. READ commands access columns according to the programmed burst length and sequence, just as in the normal mode of operation ( ...

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... IS42S16400B WRITE with Auto Precharge 3. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after t where t begins when the READ to bank m is registered. ...

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... IS42S16400B INITIALIZE AND LOAD MODE REGISTER CLK CKS CKH CKE CMH CMS CMH CMS COMMAND NOP PRECHARGE DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 ALL BANKS Power-up: V Precharge CC and CLK stable all banks T = 100µ ...

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... IS42S16400B POWER-DOWN MODE CYCLE T0 CLK t t CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High-Z DQ Two clock cycles Precharge all All banks idle, enter active banks power-down mode ...

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... IS42S16400B CLOCK SUSPEND MODE CLK CKS CKH CKS CKE t t CMS CMH COMMAND READ NOP t t CMS CMH DQM/ DQML, DQMH (2) A0-A9, A11 COLUMN A10 BA0, BA1 BANK DQ CAS latency = 3, burst length = 2 Integrated Silicon Solution, Inc. — ...

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... IS42S16400B AUTO-REFRESH CYCLE T0 t CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE NOP DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK ( High-Z CAS latency = Auto NOP Refresh RFC Integrated Silicon Solution, Inc. — ...

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... IS42S16400B SELF-REFRESH CYCLE T0 t CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE NOP DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High Precharge all active banks refresh mode CAS latency = 2, 3 Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16400B READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS ...

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... IS42S16400B READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t DQM/ DQML, DQMH A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16400B SINGLE READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW DISABLE AUTO PRECHARGE BA0, BA1 BANK DQ t RCD t RAS t RC ...

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... IS42S16400B SINGLE READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16400B ALTERNATING BANK READ ACCESSES CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK BANK 0 RCD t RRD t - BANK 0 ...

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... IS42S16400B READ - FULL-PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP READ t CMS DQM/ DQML, DQMH A0-A9, A11 ROW COLUMN A10 ROW BA0, BA1 BANK BANK DQ t RCD Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16400B READ - DQM OPERATION CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD 46 T2 ...

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... IS42S16400B WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16400B WRITE - WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/ DQML, DQMH A0-A9, A11 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK RCD ...

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... IS42S16400B SINGLE WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC Integrated Silicon Solution, Inc. — ...

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... IS42S16400B SINGLE WRITE - WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND (3) ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW BA0, BA1 BANK DQ t RCD t RAS ...

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... IS42S16400B ALTERNATING BANK WRITE ACCESS CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/ DQML, DQMH A0-A9, A11 ROW COLUMN ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK ...

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... IS42S16400B WRITE - FULL PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW BA0, BA1 BANK DQ t RCD WRITE NOP ...

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... IS42S16400B WRITE - DQM OPERATION CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW A10 ROW BA0, BA1 BANK DQ t RCD Integrated Silicon Solution, Inc. — www.issi.com Rev. F ...

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... MHz 7 54 Order Part No. Package IS42S16400B-6T 400-mil TSOP II IS42S16400B-6TL 400-mil TSOP II, Lead-free IS42S16400B-7T 400-mil TSOP II IS42S16400B-7TL 400-mil TSOP II, Lead-free Order Part No. Package IS42S16400B-6TLI 400-mil TSOP II, Lead-free IS42S16400B-7TI 400-mil TSOP II IS42S16400B-7TLI 400-mil TSOP II, Lead-free Integrated Silicon Solution, Inc. — www.issi.com Rev. F 05/21/07 ...

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... C 0.12 0.21 D 22.02 22.42 E1 10.03 10.29 E 11.56 11.96 e 0.80 BSC L 0.40 0.60 L1 — — — ZD 0.71 REF 0° 8° Integrated Silicon Solution, Inc. Rev. D 03/13/07 N/2 Inches Min Max Symbol Ref. Std. No. Leads (N) 0.047 0.002 0.006 — 0.012 0.018 0.005 0.0083 0.867 0.8827 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 — ...