IS61C1024-20H Integrated Silicon Solution, IS61C1024-20H Datasheet

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IS61C1024-20H

Manufacturer Part Number
IS61C1024-20H
Description
128K x 8 high-speed CMOS static RAM
Manufacturer
Integrated Silicon Solution
Datasheet
IS61C1024
IS61C1024L
128K x 8 HIGH-SPEED
CMOS STATIC RAM
FEATURES
• High-speed access time: 12, 15, 20, 25 ns
• Low active power: 600 mW (typical)
• Low standby power: 500 W (typical) CMOS
• Output Enable (
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 5V ( 10%) power supply
• Low power version available: IS61C1024L
• Commercial and industrial temperature ranges
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
standby
(
required
available
CE1
and CE2) inputs for ease in applications
FUNCTIONAL BLOCK DIAGRAM
OE
) and two Chip Enable
I/O0-I/O7
A0-A16
VCC
GND
CE1
CE2
WE
OE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using ISSI 's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low
power consumption devices.
When
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
controls both writing and reading of the memory.
The IS61C1024 and IS61C1024L are available in 32-pin
300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,
8 x 13.4) packages.
ISSI
CE1
CE1
IS61C1024 and IS61C1024L are very high-speed,
is HIGH or CE2 is LOW (deselected), the device
MEMORY ARRAY
and CE2. The active LOW Write Enable (
COLUMN I/O
512 x 2048
ISSI
MAY 1999
WE
®
1
)

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IS61C1024-20H Summary of contents

Page 1

... Easy memory expansion is provided by using two Chip Enable CE1 inputs, and CE2. The active LOW Write Enable ( controls both writing and reading of the memory. The IS61C1024 and IS61C1024L are available in 32-pin 300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type 13.4) packages. DECODER MEMORY ARRAY ...

Page 2

... IS61C1024 IS61C1024L PIN CONFIGURATION 32-Pin SOJ VCC A16 2 31 A15 A14 3 30 CE2 A12 A13 A11 A10 CE1 I/O7 I/ I/O6 I/ I/O5 I/ I/O4 GND 16 17 I/O3 PIN DESCRIPTIONS A0-A16 Address Inputs ...

Page 3

... IS61C1024 IS61C1024L ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Temperature Under Bias BIAS T Storage Temperature STG P Power Dissipation Output Current (LOW) OUT Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 4

... SB CC CE1 Current (CMOS Inputs) CE2 0. Note address and data inputs are cycling at the maximum frequency means no input lines change. MAX IS61C1024L POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I Vcc Operating Supply Current I OUT I ...

Page 5

... Test conditions assume signal transition times less, timing reference levels of 1.5V, input pulse levels 3.0V and output loading specified in Figure 1. 2. -12 ns device for IS61C1024 only. 3. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested. ...

Page 6

... IS61C1024 IS61C1024L AC WAVEFORMS (1,2) READ CYCLE NO. 1 ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS OE CE1 CE2 t LZCE1 t LZCE2 HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. 3. Address is valid prior to or coincident with OHA ...

Page 7

... The internal write time is defined by the overlap of initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 3. -12 ns device for IS61C1024 only Tested with HIGH ...

Page 8

... IS61C1024 IS61C1024L AC WAVEFORMS CE WRITE CYCLE NO Controlled, ADDRESS t SA CE1 CE2 WE D DATA UNDEFINED OUT WRITE CYCLE NO HIGH During Write Cycle) ADDRESS OE CE1 LOW HIGH CE2 DATA UNDEFINED OUT D IN Notes: 1. The internal write time is defined by the overlap of initiate a Write, but any one can go inactive to terminate the Write ...

Page 9

... IS61C1024 IS61C1024L OE WRITE CYCLE NO LOW During Write Cycle) ADDRESS OE LOW CE1 LOW HIGH CE2 DATA UNDEFINED OUT D IN Integrated Silicon Solution, Inc. — 1-800-379-4774 SR028-1K 05/12/99 ( VALID ADDRESS PWE2 t HZWE HIGH DATA VALID IN ISSI ® ...

Page 10

... Plastic SOJ IS61C1024-15KI 400-mil Plastic SOJ IS61C1024-15HI sTSOP (Type I) IS61C1024-15TI TSOP (Type I) IS61C1024-20JI 300-mil Plastic SOJ IS61C1024-20KI 400-mil Plastic SOJ IS61C1024-20HI sTSOP (Type I) IS61C1024-20TI TSOP (Type I) IS61C1024-25JI 300-mil Plastic SOJ IS61C1024-25KI 400-mil Plastic SOJ IS61C1024-25HI sTSOP (Type I) IS61C1024-25TI TSOP (Type I) Order Part No ...

Page 11

... IS61C1024 IS61C1024L Integrated Silicon Solution, Inc. — 1-800-379-4774 SR028-1K 05/12/99 ISSI ISSI Integrated Silicon Solution, Inc. 2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: sales@issi.com www.issi.com ® ® 11 ...

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