IS61C512-15N INTEGRATED CIRCUIT SOLUTION, IS61C512-15N Datasheet

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IS61C512-15N

Manufacturer Part Number
IS61C512-15N
Description
Manufacturer
INTEGRATED CIRCUIT SOLUTION
Datasheet

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ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
IS61C512
FEATURES
• Pin compatible with 128K x 8 devices
• High-speed access time: 15, 20, 25, 35 ns
• Low active power: 500 mW (typical)
• Low standby power
• Output Enable (OE) and two Chip Enable
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
Integrated Circuit Solution Inc.
SR011-0B
IS61C512
64K x 8 HIGH-SPEED CMOS STATIC RAM
— 250 µW (typical) CMOS standby
(CE1 and CE2) inputs for ease in applications
required
FUNCTIONAL BLOCK DIAGRAM
I/O0-I/O7
A0-A15
VCC
GND
CE1
CE2
OE
WE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
word by 8-bit CMOS static RAMs. They are fabricated using
ICSI
reliable process coupled with innovative circuit design
techniques, yields higher performance and low power con-
sumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down to 1 mW (typical) with CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C512 is available in 32-pin 300mil DIP, SOJ and
8*20mm TSOP-1 packages.
ICSI
's high-performance CMOS technology. This highly
IS61C512 is a very high-speed, low power, 65,536
MEMORY ARRAY
COLUMN I/O
512 X 1024
1

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IS61C512-15N Summary of contents

Page 1

... CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C512 is available in 32-pin 300mil DIP, SOJ and 8*20mm TSOP-1 packages. DECODER MEMORY ARRAY ...

Page 2

... IS61C512 PIN CONFIGURATION 32-Pin DIP and SOJ VCC A15 A14 3 30 CE2 A12 A13 A11 A10 CE1 I/O7 I/ I/O6 I/ I/O5 I/ I/O4 GND 16 17 I/O3 PIN DESCRIPTIONS A0-A15 Address Inputs ...

Page 3

... IS61C512 OPERATING RANGE Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C DC ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH (1) V Input LOW Voltage IL I Input Leakage LI I Output Leakage LO Notes – ...

Page 4

... IS61C512 READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE1 Access Time t 1 ACE t CE2 Access Time ACE 2 OE Access Time t DOE OE to Low-Z Output (2) t LZOE OE to High-Z Output (2) t HZOE ...

Page 5

... IS61C512 AC WAVEFORMS READ CYCLE NO. 1 (1,2) ADDRESS D OUT READ CYCLE NO. 2 (1,3) ADDRESS OE CE1 CE2 D OUT SUPPLY CURRENT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = V 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. Integrated Circuit Solution Inc. ...

Page 6

... IS61C512 WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time WC CE1 to Write End t 1 SCE t CE2 to Write End 2 SCE t Address Setup Time to Write End AW t Address Hold from Write End HA t Address Setup Time SA WE Pulse Width (4) t PWE t Data Setup to Write End ...

Page 7

... IS61C512 WRITE CYCLE NO. 2 (CE1 CE1 CE1 CE1, CE2 Controlled) CE1 ADDRESS CE1 CE2 WE D OUT D IN Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write ...

Page 8

... TSOP-1 25 300mil SOJ 35 300mil DIP 35 8*20mm TSOP-1 35 7F, NO. 106, SEC. 1, HSIN-TAI 5 HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. Package IS61C512-15JI 300mil SOJ IS61C512-15NI 300mil DIP IS61C512-15TI 8*20mm TSOP-1 IS61C512-20JI 300mil SOJ IS61C512-20NI 300mil DIP IS61C512-20TI 8*20mm TSOP-1 IS61C512-25JI 300mil SOJ IS61C512-25NI 300mil DIP ...

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