MMBT9014

Manufacturer Part NumberMMBT9014
ManufacturerUnisonic Technologies
MMBT9014 datasheet
 


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UTC MMBT9014
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC MMBT9015
MARKING
14
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Output Capacitance
Current gain-Bandwidth Porduct
Noise Figure
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1: EMITTER 2: BASE 3: COLLECTOR
( Ta=25°C, unless otherwise specified )
SYMBOL
RATING
V
50
CBO
V
45
CEO
V
EBO
Ic
100
Pc
225
T
150
j
T
-55 ~ +150
STG
(Ta=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
Ic=100µA, I
=0
CBO
E
BV
Ic=1mA, I
=0
CEO
B
BV
I
=100µA, Ic=0
EBO
E
I
V
=50V, I
=0
CBO
CB
E
I
V
=5V, I
=0
EBO
EB
C
hFE
V
=5V,Ic=1mA
CE
V
(sat)
Ic=100mA, I
=5mA
CE
B
V
(sat)
Ic=100mA, I
=5mA
BE
B
V
(on)
V
=5V, Ic=2mA
BE
CE
Cob
V
=10V, I
=0, f=1MHz
CB
E
fT
V
=5V, Ic=10mA
CE
NF
V
=5V, Ic=0.2mA
CE
f=1KHz, Rs=2KΩ
2
1
3
SOT-23
UNIT
V
V
5
V
mA
mW
°C
°C
MIN
TYP
MAX
UNIT
50
V
45
V
5
V
50
nA
100
nA
60
280
1000
0.14
0.3
V
0.84
1.0
V
0.58
0.63
0.7
V
2.2
3.5
pF
150
270
MHz
0.9
10
dB
1
QW-R206-022,A