MMBT9014 Unisonic Technologies, MMBT9014 Datasheet

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MMBT9014

Manufacturer Part Number
MMBT9014
Description
Manufacturer
Unisonic Technologies
Datasheet

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UTC MMBT9014
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC MMBT9015
MARKING
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
UTC
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Current gain-Bandwidth Porduct
Base-emitter saturation voltage
14
Base-emitter on voltage
Collector cutoff current
Emitter cutoff current
Output Capacitance
DC current gain
PARAMETER
Noise Figure
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD.
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
V
V
V
BV
BV
BV
CE
BE
BE
I
I
hFE
Cob
CBO
EBO
NF
fT
CBO
CEO
EBO
(sat)
(sat)
(on)
( Ta=25°C, unless otherwise specified )
SYMBOL
(Ta=25°C, unless otherwise specified)
V
V
V
T
Pc
CBO
CEO
EBO
STG
Ic
T
j
V
TEST CONDITIONS
CB
Ic=100mA, I
Ic=100mA, I
V
V
f=1KHz, Rs=2KΩ
V
V
=10V, I
CE
Ic=100µA, I
I
CE
V
E
CE
V
Ic=1mA, I
CE
CB
=100µA, Ic=0
=5V, Ic=0.2mA
EB
=5V, Ic=10mA
=5V, Ic=2mA
=5V,Ic=1mA
=50V, I
=5V, I
E
=0, f=1MHz
1: EMITTER 2: BASE 3: COLLECTOR
B
B
B
C
=5mA
=5mA
E
E
=0
=0
=0
=0
-55 ~ +150
RATING
100
225
150
50
45
5
1
MIN
0.58
150
50
45
60
5
2
TYP
0.14
0.84
0.63
280
270
2.2
0.9
3
SOT-23
MAX
1000
UNIT
100
mW
0.3
1.0
0.7
3.5
QW-R206-022,A
50
10
mA
°C
°C
V
V
V
UNIT
MHz
dB
nA
nA
pF
V
V
V
V
V
V
1

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MMBT9014 Summary of contents

Page 1

... UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC MMBT9015 MARKING 14 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature ...

Page 2

... UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK A RANGE 60-150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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