MBM29LV200BC-70PFTN Meet Spansion Inc., MBM29LV200BC-70PFTN Datasheet

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MBM29LV200BC-70PFTN

Manufacturer Part Number
MBM29LV200BC-70PFTN
Description
Manufacturer
Meet Spansion Inc.
Datasheet

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MBM29LV200TC
MBM29LV200BC
Data Sheet (Retired Product)
This product has been retired and is not recommended for new designs. Availability of this document is retained for reference
and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number MBM29LV200TC/BC
-70/-90
-70/-90
/
Revision DS05-20865-6E
Issue Date July 31, 2007
90
MBM29LV200TC
-70/-90
Cover Sheet
/MBM29LV200BC
-70/-

Related parts for MBM29LV200BC-70PFTN

MBM29LV200BC-70PFTN Summary of contents

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... For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29LV200TC/BC / -70/-90 -70/-90 Revision DS05-20865-6E -70/-90 -70/- 90 MBM29LV200TC /MBM29LV200BC Cover Sheet Issue Date July 31, 2007 ...

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This page left intentionally blank MBM29LV200TC/BC_DS05-20865-6E July 31, 2007 ...

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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...

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... To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. ■ PRODUCT LINE UP Part No. Ordering Part No. Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) ■ PACKAGES 48-pin plastic TSOP(1) Marking Side (FPT-48P-M19) /MBM29LV200BC -70/-90 MBM29LV200TC/MBM29LV200BC +0.3 V − 3 –0 3.0 V — CC –0 ...

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The MBM29LV200TC/BC are pin and command set compatible with JEDEC standard E are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. ...

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MBM29LV200TC/200BC ■ FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(1) (Package suffix: PFTN – Normal ...

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... (FPT-48P-M19 (Marking Side N.C. 17 N.C. 16 RY/BY 15 N.C. 14 N.C. 13 MBM29LV200TC/MBM29LV200BC RESET 12 Reverse Bend WE 11 N. (FPT-48P-M20) Retired Product DS05-20865-6E_July 31, 2007 -70/ ...

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MBM29LV200TC/200BC ■ PIN DESCRIPTION Pin name Address Inputs Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output RESET Hardware Reset Pin/Temporary Sector ...

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BLOCK DIAGRAM V CC RY/ Buffer WE State BYTE Control RESET Command Register CE OE Low V Detector ■ LOGIC SYMBOL MBM29LV200TC/200BC RY/BY Erase Voltage Generator Program Voltage Chip ...

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MBM29LV200TC/200BC ■ DEVICE BUS OPERATION MBM29LV200TC/200BC User Bus Operations Table (BYTE = V Operation Auto-Select Manufacturer Code * 1 Auto-Select Device Code * Read * 3 Standby Output Disable Write (Program/Erase Enable Sector Protection * * Verify Sector ...

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MBM29LV200TC/200BC Standard Command Definitions Table First Bus Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word 1 XXXh F0h Read/Reset Byte Word 555h 3 AAh Read/Reset AAAh Byte ...

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... This command is valid while RESET = V *3: The data “00h” is also acceptable. MBM29LV200TC/200BC Sector Protection Verify Autoselect Codes Table Type Manufacture’s Code MBM29LV200TC Device Code MBM29LV200BC Sector Protection * for Byte mode. -1 *2: Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. 12 ...

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... Type Code Manufacturer’s Code* 04h (B) 3Bh A MBM29LV200TC (W) 223Bh Device Code (B) BFh A MBM29LV200BC (W) 22BFh Sector Protection 01h (B) : Byte mode (W) : Word mode HI-Z : High Byte mode are High-Z and MBM29LV200TC/200BC Expanded Autoselect Code Table ...

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... MBM29LV200BC Sector Architecture Retired Product DS05-20865-6E_July 31, 2007 (×8) (×16) 3FFFFh 1FFFFh 2FFFFh 17FFFh 1FFFFh 0FFFFh 0FFFFh 07FFFh 07FFFh 03FFFh 8K byte 05FFFh ...

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... Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 Sector Address Tables (MBM29LV200BC) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 1 1 ...

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MBM29LV200TC/200BC ■ FUNCTIONAL DESCRIPTION Read Mode The MBM29LV200TC/BC have two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the ...

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... IL code (MBM29LV200TC = 3Bh and MBM29LV200BC = BFh for ×8 mode; MBM29LV200TC = 223Bh and MBM29LV200BC = 22BFh for ×16 mode). These two bytes/words are given in the “MBM29LV200TC/200BC Sector Protection Verify Autoselect Codes Table” and “Expanded Autoselect Code Table” in ■DEVICE BUS OPERATION ...

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MBM29LV200TC/200BC Temporary Sector Unprotection This feature allows temporary unprotection of previously protected sectors of the MBM29LV200TC/BC devices in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this ...

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... XX01h for ×16(XX02h for ×8) returns the device code (MBM29LV200TC = 3Bh and MBM29LV200BC = BFh for ×8 mode; MBM29LV200TC = 223Bh and MBM29LV200BC = 22BFh for ×16 mode). (See “MBM29LV200TC/200BC Sector Protection Verify Autoselect Codes Table” and “Expanded Autoselect Code Table” ...

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MBM29LV200TC/200BC Chip Erase Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the chip erase command. Chip erase ...

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Erase Suspend The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which ...

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MBM29LV200TC/200BC (3) Extended Sector Protection In addition to normal sector protection, the MBM29LV200TC/BC has Extended Sector Protection as extended function. This function enable to protect sector by forcing V Unlike conventional procedure not necessary to force V RESET ...

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Otherwise, the status may not be valid. Once the Embedded Algorithm operation is close to being completed, the MBM29LV200TC/BC data pins (DQ enable (OE) is asserted low. This means that the devices are driving status ...

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MBM29LV200TC/200BC DQ 3 Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial ...

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RY/BY Ready/Busy The MBM29LV200TC/BC provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy ...

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MBM29LV200TC/200BC Logical Inhibit Writing is inhibited by holding any one must be a logical zero while logical one. Power-Up Write Inhibit Power-up of the devices with The internal ...

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ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with respect to Ground All Pins Except A , OE, and RESET Power Supply Voltage OE, and RESET ...

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MBM29LV200TC/200BC ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note: This waveform is applied for A 28 -70/ ...

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DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current Current (Standby Current (Standby, Reset Current ...

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MBM29LV200TC/200BC ■ AC CHARACTERISTICS • Read Only Operations Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From ...

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Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Output Enable Hold Time Toggle and Data Polling Read Recover Time Before Write Read Recover Time ...

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MBM29LV200TC/200BC ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle ■ PIN CAPACITANCE 1. SOP Parameter Input Capacitance Output Capacitance Control Pin Capacitance Notes : • Test conditions T ...

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TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address High-Z Outputs MBM29LV200TC/200BC WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from ...

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MBM29LV200TC/200BC (2) AC Waveforms for Hardware Reset/Read Operations Address RESET Outputs 34 -70/ Address Stable t ACC t RH High-Z Retired Product DS05-20865-6E_July 31, 2007 t OH Output Valid ...

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AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL A0h Data Notes : • address of the memory location to ...

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MBM29LV200TC/200BC (4) AC Waveforms for Alternate CE Controlled Program Operations Address Data Notes : • address of the memory location to be programmed. • data to be programmed at byte address. • DQ ...

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AC Waveforms Chip/Sector Erase Operations Address 555h GHWL Data t VCS V CC Notes : • the sector address for Sector Erase. Addresses = 555h ...

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MBM29LV200TC/200BC (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data Valid Data (The device has completed the Embedded operation). 7 (7) AC Waveforms ...

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RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (9) RESET, RY/BY Timing Diagram WE RESET RY/BY MBM29LV200TC/200BC Rising edge of the last WE signal Entire programming or erase operations t BUSY READY Retired ...

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MBM29LV200TC/200BC (10) Timing Diagram for Word Mode Configuration CE BYTE ELFH (11) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL ...

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AC Waveforms for Sector Protection Timing Diagram SAX VLHT ...

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MBM29LV200TC/200BC (14) Temporary Sector Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY (15 Enter Erase Embedded Suspend Erasing WE Erase Toggle DQ ...

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Extended Sector Protection Timing Diagram VCS RESET t VLHT t VIDR Address Data 60h SPAX: Sector Address to be protected SPAY : Next Sector Address to be ...

Page 44

MBM29LV200TC/200BC ■ FLOW CHART TM (1) Embedded Program Algorithm EMBEDDED ALGORITHMS Increment Address *: The sequence is applied for × 16 mode. The addresses differ from × 8 mode. 44 -70/90 Start Write Program Command Sequence (See below) Data Polling ...

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Embedded Erase TM Algorithm EMBEDDED ALGORITHMS Chip Erase Command Sequence* (Address/Command): 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h * : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. MBM29LV200TC/200BC Start Write Erase Command ...

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MBM29LV200TC/200BC (3) Data Polling Algorithm Note : DQ is rechecked even -70/90 Start VA = Byte address for programming Read = Any of the sector addresses within ( Addr ...

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Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling rechecked even MBM29LV200TC/200BC Start Read Addr. = "H" or "L" *1 Read ...

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MBM29LV200TC/200BC (5) Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed *: byte mode -70/90 Start Setup Sector Addr ...

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Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. MBM29LV200TC/200BC Start 1 RESET = Perform Erase or Program Operations RESET = V IH Temporary ...

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MBM29LV200TC/200BC (7) Extended Sector Protection Algorithm FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 50 -70/90 Start RESET = V ...

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Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Note : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. MBM29LV200TC/200BC Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data ...

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... Part number MBM29LV200TC-70PF MBM29LV200TC-90PF 48-pin plastic TSOP (1) MBM29LV200TC-70PFTN MBM29LV200TC-90PFTN 48-pin plastic TSOP (1) MBM29LV200TC-70PFTR MBM29LV200TC-90PFTR MBM29LV200BC-70PF MBM29LV200BC-90PF 48-pin plastic TSOP (1) MBM29LV200BC-70PFTN MBM29LV200BC-90PFTN 48-pin plastic TSOP (1) MBM29LV200BC-70PFTR MBM29LV200BC-90PFTR MBM29LV200 T C -70 DEVICE NUMBER/DESCRIPTION MBM29LV200 2Mega-bit (256K × 8-Bit or 128K × 16-Bit) CMOS Flash Memory 3 ...

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PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 ± 0.20 (.787 ± .008) * 18.40 ± 0.20 (.724 ± .008) "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6-7 C MBM29LV200TC/200BC Note Values do not ...

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MBM29LV200TC/200BC 48-pin plastic TSOP(1) (FPT-48P-M20) LEAD No. 1 INDEX 24 0.10(.004) "A" * 18.40 (.724 20.00 (.787 2003 FUJITSU LIMITED F48030S-c-6 -70/90 ) Note Values do not include resin protrusion. Resin protrusion and gate protrusion ...

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SOP (FPT-44P-M16) +0.25 +.010 * 1 28.45 1.120 –0.20 –.008 44 INDEX 1 1.27(.050) +0.08 0.42 –0.07 +.0031 .017 –.0028 0.10(.004) 2002 FUJITSU LIMITED F44023S-c-6-6 C MBM29LV200TC/200BC Note 1)*1 : These dimensions include resin protrusion. Note 2)*2 ...

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MBM29LV200TC/200BC MEMO 56 -70/90 Retired Product DS05-20865-6E_July 31, 2007 ...

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MEMO Retired Product DS05-20865-6E_July 31, 2007 MBM29LV200TC/200BC -70/90 57 ...

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MBM29LV200TC/200BC MEMO 58 -70/90 Retired Product DS05-20865-6E_July 31, 2007 ...

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Revision History Revision DS05-20865-6E(July 31, 2007) The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29LV200TC/200BC Retired Product DS05-20865-6E_July 31, 2007 ...

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MBM29LV200TC/200BC FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 ...

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