SST29LE010-150-4I-NH Silicon Storage Technology, Inc, SST29LE010-150-4I-NH Datasheet

no-image

SST29LE010-150-4I-NH

Manufacturer Part Number
SST29LE010-150-4I-NH
Description
1 Mbit (128K x 8) page-mode EEPROM
Manufacturer
Silicon Storage Technology, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST29LE010-150-4I-NH
Manufacturer:
SST
Quantity:
5 510
FEATURES:
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
PRODUCT DESCRIPTION
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST’s proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE010 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE010 provide a typical Byte-Write time of 39 µsec. The
entire memory, i.e., 128 KBytes, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/LE/VE010 have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, the
SST29EE/LE/VE010 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
©2001 Silicon Storage Technology, Inc.
S71061-07-000 6/01
1
– 5.0V-only for SST29EE010
– 3.0-3.6V for SST29LE010
– 2.7-3.6V for SST29VE010
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical) for 5V and 10 mA
– Standby Current: 10 µA (typical)
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
– 5.0V-only operation: 70 and 90 ns
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 and 250 ns
(typical) for 3.0/2.7V
1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories
304
SST29EE010 / SST29LE010 / SST29VE010
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Latched Address and Data
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• Product Identification can be accessed via
• TTL I/O Compatibility
• JEDEC Standard
• Packages Available
The SST29EE/LE/VE010 are suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
the SST29EE/LE/VE010 significantly improve performance
and reliability, while lowering power consumption. The
SST29EE/LE/VE010 improve flexibility while lowering the
cost for program, data, and configuration storage applica-
tions.
To meet high density, surface mount requirements, the
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE010 does not require
separate Erase and Program operations. The internally
timed write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE010 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE010 are compatible with industry standard EEPROM
pinouts and functionality.
– Internal V
– Toggle Bit
– Data# Polling
Software Operation
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
PP
Generation
These specifications are subject to change without notice.
SSF is a trademark of Silicon Storage Technology, Inc.
Data Sheet

Related parts for SST29LE010-150-4I-NH

SST29LE010-150-4I-NH Summary of contents

Page 1

... Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • ...

Page 2

... Data Protection load sequence, the page load cycle, and the internal write cycle. The Software Data Protection ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 consists of a specific three-byte load sequence that allows writing to the selected page and will leave the SST29EE/ LE/VE010 protected at the end of the Page-Write ...

Page 3

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Write Operation Status Detection The SST29EE/LE/VE010 provide two software means to detect the completion of a Write cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ (DQ ) ...

Page 4

... FIGURE SSIGNMENTS FOR ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Product Identification Mode Exit In order to return to the standard read mode, the Software Product Identification mode must be exited. Exiting is accomplished by issuing the Software ID Exit (reset) opera- tion, which returns the device to the Read operation. The ...

Page 5

... Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the Write operations. To provide: 5.0V supply (±10%) for SST29EE010 3.0V supply (3.0-3.6V) for SST29LE010 2.7V supply (2.7-3.6V) for SST29VE010 Unconnected pins OE# 31 ...

Page 6

... Note: This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code sequence. For new designs, SST recommends that the three-byte command code sequence be used. ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 WE# DQ ...

Page 7

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° ...

Page 8

... Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH ©2001 Silicon Storage Technology, Inc. 1 Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 V = 5.0V±10% SST29EE010 FOR DD Limits Min Max Units Test Conditions Address input Max DD ...

Page 9

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet TABLE ECOMMENDED YSTEM Symbol Parameter 1 T Power-up to Read Operation PU-READ 1 T Power-up to Write Operation PU-WRITE 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ...

Page 10

... OE# High to High-Z Output OHZ 1 T Output Hold from Address Change OH 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 ARAMETERS FOR SST29EE010-70 Min Max 70 0 ...

Page 11

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet TABLE 13 AGE RITE YCLE Symbol Parameter T Write Cycle (Erase and Program Address Setup Time AS T Address Hold Time AH T WE# and CE# Setup Time CS T WE# and CE# Hold Time CH T OE# High Setup Time ...

Page 12

... IMING Three-Byte Sequence for Enabling SDP ADDRESS A 16-0 5555 2AAA CE# OE# WE SW0 SW1 FIGURE 5: WE# C ONTROLLED ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 OLZ T CLZ DATA VALID D IAGRAM 5555 OES T OEH T WP ...

Page 13

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Three-Byte Sequence for Enabling SDP ADDRESS A 16-0 5555 2AAA CE# OE# WE SW0 SW1 FIGURE 6: CE# C ONTROLLED ADDRESS A 16-0 CE# OE# WE FIGURE ATA OLLING IMING ©2001 Silicon Storage Technology, Inc ...

Page 14

... OGGLE IT IMING ADDRESS A 14-0 5555 DQ 7-0 AA CE# OE WE# SW0 FIGURE OFTWARE ATA ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 BLCO D IAGRAM Six-Byte Sequence for Disabling Software Data Protection 2AAA 5555 5555 2AAA BLC SW1 ...

Page 15

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet ADDRESS A 14-0 5555 DQ 7-0 AA CE# OE WE# SW0 FIGURE 10 OFTWARE HIP Three-Byte Sequence for Software ID Entry ADDRESS A 14-0 5555 2AAA DQ 7-0 AA CE# OE WE# SW0 FIGURE 11 OFTWARE NTRY AND ©2001 Silicon Storage Technology, Inc. ...

Page 16

... Software ID Exit and Reset ADDRESS A 14-0 5555 DQ 7-0 AA CE# OE WE# SW0 FIGURE 12 OFTWARE XIT AND ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 2AAA 5555 IDA T BLC SW1 SW2 R ESET 16 1 Mbit Page-Mode EEPROM Data Sheet 304 ILL F11.0 ...

Page 17

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet V IHT INPUT V ILT AC test inputs are driven at V (2.4V) for a logic “1” and V IHT inputs and outputs are V (2.0 V) and V HT FIGURE 13 NPUT UTPUT TO DUT FIGURE 14 EST OAD XAMPLE © ...

Page 18

... See Figure 17 FIGURE 15 RITE LGORITHM ©2001 Silicon Storage Technology, Inc. 1 Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Start Software Data Protect Write Command Set Page Address Set Byte Address = 0 Load Byte Data Increment Byte Address By 1 Byte No Address = 128? Yes Wait T BLCO ...

Page 19

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Internal Timer Page-Write Initiated Wait T WC Write Completed FIGURE 16 AIT PTIONS ©2001 Silicon Storage Technology, Inc. Toggle Bit Page-Write Initiated Read a byte from page Read same byte No Does DQ 6 match? Yes Write ...

Page 20

... Wait T BLCO Wait T WC SDP Enabled FIGURE 17 OFTWARE ATA ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Software Data Protect Disable Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 80H Address: 5555H Optional Page Load ...

Page 21

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet Software Product ID Entry Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 90H Address: 5555H Pause 10 µs Read Software ID FIGURE 18 OFTWARE RODUCT ©2001 Silicon Storage Technology, Inc. ...

Page 22

... FIGURE 19 OFTWARE HIP ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 Software Chip-Erase Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 80H Address: 5555H Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH ...

Page 23

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet PRODUCT ORDERING INFORMATION Device Speed Suffix1 SST29xE010 - XXX - XX ©2001 Silicon Storage Technology, Inc. Suffix2 - XX Package Modifier leads or pins Numeric = Die modifier Package Type N = PLCC W = TSOP (die up) (8mm x 14mm TSOP (die up) (8mm x 20mm) ...

Page 24

... SST29EE010-70-4C-NH SST29EE010-70-4C-WH SST29EE010-90-4C-NH SST29EE010-90-4C-WH SST29EE010-70-4I-NH SST29EE010-70-4I-WH SST29EE010-90-4C-U2 Valid combinations for SST29LE010 SST29LE010-150-4C-NH SST29LE010-150-4C-WH SST29LE010-150-4I-NH SST29LE010-150-4I-WH SST29LE010-200-4C-U2 Valid combinations for SST29VE010 SST29VE010-200-4C-NH SST29VE010-200-4C-WH SST29VE010-200-4I-NH SST29VE010-200-4I-WH SST29VE010-250-4C-U2 Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations ...

Page 25

... Mbit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet PACKAGING DIAGRAMS TOP VIEW .485 .495 .447 Optional .453 Pin #1 Identifier .042 .048 .042 .048 .585 .547 .595 .553 .050 BSC. Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. ...

Page 26

... PIN LASTIC UAL IN INE ACKAGE SST ACKAGE ODE Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2001 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 18.50 18.30 20.20 19.80 (TSOP ACKAGE 1.645 1.655 .120 ...

Related keywords