AM29F040B-55JK Meet Spansion Inc., AM29F040B-55JK Datasheet
AM29F040B-55JK
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AM29F040B-55JK Summary of contents
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... Am29F040B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary ...
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... DATA SHEET Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V ± 10% for read and write operations • — Minimizes system level power requirements • Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device • High performance — ...
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... GENERAL DESCRIPTION The Am29F040B Mbit, 5.0 volt-only Flash mem- ory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F040B is offered in 32-pin PLCC, TSOP, and PDIP packages ...
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... Requirements for Reading Array Data ..................................... 7 Writing Commands/Command Sequences .............................. 7 Program and Erase Operation Status ...................................... 7 Standby Mode .......................................................................... 7 Output Disable Mode................................................................ 8 Table 2. Sector Addresses Table ......................................................8 Autoselect Mode....................................................................... 9 Table 3. Am29F040B Autoselect Codes (High Voltage Method) .......9 Sector Protection/Unprotection................................................. 9 Hardware Data Protection ........................................................ 9 Low V Write Inhibit ........................................................................ 9 CC Write Pulse “Glitch” Protection.......................................................... 9 Logical Inhibit ...
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... -55 - Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F040B Am29F040B -90 -120 90 120 90 120 35 50 DQ0–DQ7 Input/Output Buffers Data Latch STB Y-Gating Cell Matrix 21445E5 November 1, 2006 ...
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... WE# A17 A14 A13 A11 A3 OE# A2 A10 A1 CE# A0 DQ7 DQ0 DQ6 DQ5 DQ4 DQ3 32-Pin Standard TSOP LOGIC SYMBOL 19 Am29F040B A14 6 28 A13 A11 PLCC A10 12 ...
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... V Read, Program, and Erase Valid Combinations AM29F040B-55 AM29F040B-70 AM29F040B-90 AM29F040B-120 Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations ° ...
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... The command register it- self does not occupy any addressable memor y location. The register is composed of latches that store the commands, along with the address and data infor- Table 1. Am29F040B Device Bus Operations Operation Read Write CMOS Standby ...
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... Table 2. Sector Addresses Table A17 A16 Am29F040B , output from the device is IH Address Range 00000h–0FFFFh 10000h–1FFFFh 20000h–2FFFFh 30000h–3FFFFh 40000h–4FFFFh 50000h–5FFFFh 60000h–6FFFFh 70000h–7FFFFh 21445E5 November 1, 2006 ...
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... V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In addi- tion, when verifying sector protection, the sector Table 3. Am29F040B Autoselect Codes (High Voltage Method) Description A18–A16 Manufacturer ID: AMD X Device ID: Am29F040B ...
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... The system can determine the status of the program operation by using DQ7 or DQ6. See “Write Operation Status” for informa- tion on these status bits. Am29F040B on address bit A9. ID 21445E5 November 1, 2006 ...
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... The system must rewrite the com- mand sequence and any additional sector addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the Am29F040B “Write for information on these status bits. for parameters, and to the Chip/ “DQ3: Sector Erase ...
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... Erase Suspend command can be written after the de- vice has resumed erasing. No Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” Am29F040B “Wr ite Operation Status” for more “Autoselect Command Sequence” START Write Erase Command Sequence Data Poll ...
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... Command Definitions Table 4. Am29F040B Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note Manufacturer ID Device ID 4 Autoselect (Note 7) Sector Protect Verify 4 (Note 8) Program 4 Chip Erase 6 Sector Erase 6 Erase Suspend (Note 9) 1 Erase Resume (Note 10) 1 Legend Don’t care RA = Address of the memory location to be read ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 3. Data# Polling Algorithm Am29F040B “AC Characteristics” section Yes No Yes ...
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... DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase cycle was not successfully completed. Am29F040B 5 to compare outputs “DQ2: Toggle Bit II” explains the “ ...
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... Operation Not Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 4. Toggle Bit Algorithm Am29F040B (Note 1) No Yes Yes (Notes ...
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... Exceeded Timing Limits” November 1, 2006 21445E5 Table 5. Write Operation Status DQ7 (Note 1) DQ6 DQ7# Toggle 0 Toggle 1 No toggle Data Data DQ7# Toggle for more information. Am29F040B DQ5 DQ2 (Note 2) DQ3 (Note 1) 0 N/A No toggle 0 1 Toggle 0 N/A Toggle Data Data Data ...
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... SS + 0.5 V. During +2 +0 for ± 10% devices . . . . . . . . . . . +4 +5 Operating ranges define those limits between which the functionality of the device is guaranteed. Am29F040B Overshoot Waveform Figure 6. Maximum Positive Overshoot Waveform 21445E5 November 1, 2006 ...
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... VIH CE ± 12.0 mA Min –2.5 mA Min –100 μ Min CCmax Am29F040B Min Typ Max Max ±1.0 50 Max ±1 0.4 1.0 –0.5 0.8 2 0.5 CC 10.5 12.5 0.45 2.4 3.2 4.2 Min Typ Max ±1.0 Max 50 ±1.0 Max ...
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... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F040B -55 All others Unit 1 TTL gate L 30 100 0.0–3.0 0.45– ...
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... OE Max IL Max Read Min Toggle and Min Data# Polling Max Min t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 8. Read Operation Timings Am29F040B Speed Options (Note 1) -55 -70 -90 -120 Unit 120 120 120 ns 30 ...
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... Description -55 1) Min 55 Min Min 40 Min 25 Min Min Min Min Min Min 30 Min Typ Typ Min section for more information. Am29F040B Speed Options -70 -90 -120 Unit 70 90 120 ...
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... OUT Figure 9. Program Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F040B Read Status Data (last two cycles WHWH1 Status D OUT Read Status Data WHWH2 In Complete Progress 23 ...
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... Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F040B VA High Z Valid Data True High Z True Valid Data VA VA Valid Status Valid Data (stops toggling) 21445E5 November 1, 2006 ...
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... Note: Both DQ6 and DQ2 toggle with OE# or CE#. See the text on DQ6 and DQ2 in the section information. November 1, 2006 21445E5 Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 13. DQ2 vs. DQ6 Am29F040B Erase Resume Erase Erase Complete Read “Write Operation Status” for more 25 ...
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... Programming Performance” Description -55 Min 55 Min Min 40 Min 25 Min Min Min Min Min 30 Min 20 Typ Typ section for more information. Am29F040B Speed Options -70 -90 -120 Unit 70 90 120 ...
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... for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F040B PA DQ7# D OUT = Array Data. OUT 27 ...
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... Excludes system-level overhead (Note 3.6 10.8 sec ° 4.5 V (4.75 V for -55), 1,000,000 cycles 5.0 V, one pin at a time. CC Test Setup OUT Am29F040B Comments 1,000,000 cycles. Additionally, CC Min Max –1 1 –100 mA +100 mA Typ Max Unit 6 7 ...
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... MHz. A DATA RETENTION Parameter Minimum Pattern Data Retention Time November 1, 2006 21445E5 Test Setup OUT Test Conditions 150°C 125°C Am29F040B Typ Max Unit Min Unit 10 Years 20 Years 29 ...
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... PHYSICAL DIMENSIONS PD 032—32-Pin Plastic DIP Am29F040B Dwg rev AD; 10/99 21445E5 November 1, 2006 ...
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... PHYSICAL DIMENSIONS (continued) PL 032—32-Pin Plastic Leaded Chip Carrier November 1, 2006 21445E5 Am29F040B Dwg rev AH; 10/99 31 ...
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... PHYSICAL DIMENSIONS (continued) TS 032—32-Pin Standard Thin Small Package Am29F040B Dwg rev AA; 10/99 21445E5 November 1, 2006 ...
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... Removed 150 speed option from document. Removed 32-pin Reverse TSOP diagrams and all ref- erences from Ordering Information. Revision E4 (May 18, 2006) Added migration and obsolescence information. specifi- CC Revision E5 (November 1, 2006) ”. Deleted migration and obsolescence text. Am29F040B and changed OE# waveform to start at 33 ...
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... Copyright © 1997–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trade- marks of Advanced Micro Devices, Inc. ExpressFlash™ trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies Am29F040B 21445E5 November 1, 2006 ...