GS8160Z18BGT-200 GSI Technology, GS8160Z18BGT-200 Datasheet

no-image

GS8160Z18BGT-200

Manufacturer Part Number
GS8160Z18BGT-200
Description
Manufacturer
GSI Technology
Datasheet
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
Functional Description
The GS8160Z18/36BT is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Rev: 1.00 8/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
Flow Through
Pipeline
3-1-1-1
2-1-1-1
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
Curr
Curr
Curr
Curr
tCycle
tCycle
Parameter Synopsis
t
(x32/x36)
t
(x32/x36)
KQ
KQ
(x18)
(x18)
1/23
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8160Z18/36BT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS8160Z18/36BT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
-250
280
330
210
240
2.5
4.0
5.5
5.5
-200
230
270
185
205
3.0
5.0
6.5
6.5
-150
185
210
170
190
3.8
6.7
7.5
7.5
GS8160Z18/36BT-250/200/150
Unit
mA
mA
mA
mA
ns
ns
ns
ns
© 2004, GSI Technology
250 MHz–150 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
Preliminary
DD

Related parts for GS8160Z18BGT-200

GS8160Z18BGT-200 Summary of contents

Page 1

... KQ 4.0 5.0 tCycle 280 230 Curr (x18) 330 270 Curr (x32/x36) t 5.5 6.5 KQ 5.5 6.5 tCycle 210 185 Curr (x18) 240 205 Curr (x32/x36) 1/23 Preliminary GS8160Z18/36BT-250/200/150 250 MHz–150 MHz 3.3 V I/O -150 Unit 3.8 ns 6.7 ns 185 mA 210 mA 7.5 ns 7.5 ns 170 mA 190 mA © 2004, GSI Technology DD ...

Page 2

... DDQ DQP DDQ DDQ DDQ © 2004, GSI Technology ...

Page 3

... DDQ DDQ DDQ DQP 51 A © 2004, GSI Technology ...

Page 4

... Byte D Data Input and Output pins Power down control; active high Pipeline/Flow Through Mode Control; active low Linear Burst Order; active low Core power supply Ground Output driver power supply No Connect 4/23 Preliminary ; active low A9 ; active low B9 ; active low C9 ; active low D9 © 2004, GSI Technology ...

Page 5

... GS8160Z18/36B NBT SRAM Functional Block Diagram Rev: 1.00 8/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36BT-250/200/150 Amps Sense Drivers Write 5/23 Preliminary © 2004, GSI Technology ...

Page 6

... Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com & determine which bytes will be written. All or none may be activated 6/23 Preliminary GS8160Z18/36BT-250/200/150 , E and E ). Deassertion of any one of the Enable 2 3 © 2004, GSI Technology ...

Page 7

... High-Z 1,2,3, High High High High High High © 2004, GSI Technology Notes 1,10 2 1,2,10 3 1,3, ...

Page 8

... and D represent input command codes ,as indicated in the Synchronous Truth Table. n+1 n+2 ƒ ƒ Next State Pipeline and Flow Through Read/Write Control State Diagram 8/23 Preliminary GS8160Z18/36BT-250/200/150 New Write Burst Write B D n+3 ƒ ƒ © 2004, GSI Technology ...

Page 9

... Transition and D represent input command codes as indicated in the Truth Tables. Next State (n+2) n n+1 n+2 ƒ ƒ Intermediate Current State State Pipeline Mode Data I/O State Diagram 9/23 Preliminary GS8160Z18/36BT-250/200/150 Intermediate R B Data Out W (Q Valid) D n+3 ƒ ƒ Next State © 2004, GSI Technology ...

Page 10

... Pipeline and Flow Through Read Write Control State Diagram 10/23 Preliminary GS8160Z18/36BT-250/200/150 R B Data Out W (Q Valid) D Notes 1. The Hold command (CKE Low) is not shown because it prevents any state change and D represent input command codes as indicated in the Truth Tables. n+2 n+3 ƒ ƒ © 2004, GSI Technology ...

Page 11

... Note: The burst counter wraps to initial state on the 5th clock. 11/23 Preliminary GS8160Z18/36BT-250/200/150 Function Linear Burst Interleaved Burst Flow Through Pipeline Active Standby A[1:0] A[1:0] A[1:0] A[1: BPR 1999.05.18 © 2004, GSI Technology ...

Page 12

... Rev: 1.00 8/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Sleep Mode Timing Diagram tKH tKH tKL tKL tZZS tZZH DD 12/23 Preliminary GS8160Z18/36BT-250/200/150 2. The duration of SB tZZR pipelined parts and V on flow DDQ SS © 2004, GSI Technology ...

Page 13

... V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. DDn 13/23 Preliminary GS8160Z18/36BT-250/200/150 Value –0.5 to 4.6 –0.5 to 4.6 –0 +0.5 (≤ 4.6 V max.) DDQ –0 +0.5 (≤ 4.6 V max.) DD +/–20 +/–20 1.5 –55 to 125 –55 to 125 Typ. Max. Unit 3.3 3.6 V 2.5 2.7 V 3.3 3.6 V 2.5 2.7 V © 2004, GSI Technology Unit Notes ...

Page 14

... V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. DDn 14/23 Preliminary GS8160Z18/36BT-250/200/150 Max. Unit Notes 0.3 V 1,3 DDQ 0.8 V 1,3 Max. Unit Notes 0.3 0.3 V 1,3 DDQ 0.3*V V 1,3 DD Max. Unit Notes ° ° © 2004, GSI Technology ...

Page 15

... Symbol Test conditions I/O OUT Conditions V – DDQ Fig. 1 Output Load 1 DQ 50Ω V DDQ/2 * Distributed Test Jig Capacitance 15/23 Preliminary GS8160Z18/36BT-250/200/150 50% tKC Typ. Max. Unit 30pF © 2004, GSI Technology ...

Page 16

... 16/23 Preliminary GS8160Z18/36BT-250/200/150 Min – ≥ V – ≤ V –1 uA 100 uA IH ≥ V –100 uA IL ≤ V – – 2.375 V 1 3.135 V 2.4 V — © 2004, GSI Technology Max — — 0.4 V ...

Page 17

... GSI Technology Unit ...

Page 18

... GSI Technology ...

Page 19

... Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Pipeline Mode Timing (NBT) Write B+1 Read C Cont Read D tKL tKL tKH tKH tKC tKC tLZ tS tKQ D(A) D(B) D(B+1) Q(C) tOHZ 19/23 Preliminary GS8160Z18/36BT-250/200/150 Write E Read F Write G Deselect tHZ tKQX Q(D) D(E) Q(F) tOLZ tOE © 2004, GSI Technology D(G) ...

Page 20

... Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Flow Through Mode Timing (NBT) Write B+1 Read C Cont Read D tKL tKL tKH tKH tKC tKC C D tKQ tLZ D(B) D(B+1) Q(C) tOHZ 20/23 Preliminary GS8160Z18/36BT-250/200/150 Write E Read F Write tKQX tKQ tHZ tLZ tKQX Q(D) D(E) Q(F) tOLZ tOE © 2004, GSI Technology D(G) ...

Page 21

... Package width and length do not include mold protrusion. Rev: 1.00 8/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. θ 0.10 0.15 1.40 1.45 0.30 0.40 0.20 — e 22.0 22.1 20.0 20.1 16.0 16.1 b 14.0 14.1 0.65 — 0.60 0.75 1.00 — 0.10 — 7° 21/23 Preliminary GS8160Z18/36BT-250/200/150 E1 E BPR 1999.05.18 © 2004, GSI Technology ...

Page 22

... GS8160Z18BGT-150 512K x 36 GS8160Z36BGT-250 512K x 36 GS8160Z36BGT-200 512K x 36 GS8160Z36BGT-150 GS8160Z18BGT-250I GS8160Z18BGT-200I GS8160Z18BGT-150I 512K x 36 GS8160Z36BGT-250I 512K x 36 GS8160Z36BGT-200I 512K x 36 GS8160Z36BGT-150I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8160Z18B-200IT. ...

Page 23

... Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 8160ZxxB_r1 Rev: 1.00 8/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36BT-250/200/150 Page;Revisions;Reason • Creation of new datasheet 23/23 Preliminary © 2004, GSI Technology ...

Related keywords